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dc.contributor.authorWei-Ren Chenzh_TW
dc.contributor.authorYao-Chuan Tsaizh_TW
dc.contributor.authorPo-Jen Shihzh_TW
dc.contributor.authorCheng-Chih Hsuzh_TW
dc.contributor.authorChing-Liang Daizh_TW
dc.description.abstractThe fabrication and characterization of a magnetic micro sensor (MMS) with two magnetic field effect transistors (MAGFETs) based on the commercial complementary metal oxide semiconductor (CMOS) process are investigated. The magnetic micro sensor is a three-axis sensing type. The structure of the magnetic microsensor is composed of an x/y-MAGFET and a z-MAGFET. The x/y-MAGFET is employed to sense the magnetic field (MF) in the x- and y-axis, and the z-MAGFET is used to detect the MF in the z-axis. To increase the sensitivity of the magnetic microsensor, gates are introduced into the two MAGFETs. The sensing current of the MAGFET enhances when a bias voltage is applied to the gates. The finite element method software Sentaurus TCAD was used to analyze the MMS’s performance. Experiments show that the MMS has a sensitivity of 182 mV/T in the x-axis MF and a sensitivity of 180 mV/T in the y-axis MF. The sensitivity of the MMS is 27.8 mV/T in the z-axis MF.zh_TW
dc.subjectmagnetic microsensorzh_TW
dc.subjectmagnetic field effect transistorzh_TW
dc.titleMagnetic Micro Sensors with Two Magnetic Field Effect Transistors Fabricated Using the Commercial Complementary Metal Oxide Semiconductor Processzh_TW
dc.typejournal articlezh_TW
item.openairetypejournal article-
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