Please use this identifier to cite or link to this item:
|標題:||Band gap engineered ternary semiconductor PbxCd1-xS: Nanoparticle-sensitized solar cells with an efficiency of 8.5% under 1% sun-A combined theoretical and experimental study||作者:||Patsorn Boon-on
We report the synthesis and photovoltaic properties of a ternary metal sulfide alloyed semiconductor PbxCd1−xS prepared by the two-stage sequential ionic layer adsorption reaction. The synthesized PbxCd1−xS nanoparticles (NPs) retain the hexagonal structure of the CdS host with Pb substituting a fraction of the Cd atom (x = 0-0.17). Band structures of PbxCd1−xS with various Pb contents x were calculated using the complementary density functional theory (DFT) method. Optical, quantum efficiency, cyclic voltammetry measurements, and band structure calculation revealed that the band gap of PbxCd1−xS decreased with increasing x, resulting in an increased optical absorption band from 500 to 720 nm (1.73-2.44 eV) for x = 0 to 0.17. Solid-state PbxCd1−xS semiconductor nanoparticle-sensitized solar cells (NSSCs) were fabricated from the synthesized NPs using spiro-OMeTAD as the hole-transporting material. The best Pb0.05Cd0.95S cell yielded a power conversion efficiency (PCE) of 3.67%, a Voc of 0.70 V, and a fill factor (FF) of 62.8% under 1 sun. The PCE increased to 5.93% under a reduced light intensity of 0.1 sun and further increased to 8.48% under 0.01 sun. The external quantum efficiency (EQE) spectrum covers the spectral range of 300 to 730 nm with a maximal EQE of 82% at λ = 580 nm. The PCE over 8% can be categorized into a high-efficiency NSSCs. In addition, the Voc of 0.70 V is a relatively high Voc among all NSSCs. The high PCE and Voc suggest that PbxCd1−xS has potential to be an efficient solar absorber.
|Appears in Collections:||奈米科學研究所|
Show full item record
TAIR Related Article
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.