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標題: 1150℃熱處理時Cz矽晶片內氧凝聚物及相關缺陷的成長
The growth of oxygen precipitate and related defects in Czochralski silicon annealed at 1150℃
作者: 李士傑
關鍵字: 氧凝聚物群;cluster;疊差;缺觀缺陷;間隙矽;microdefect;stacking-fault;silicon interstitial
出版社: 材料工程學研究所

The main purpose of this research is to study the influence of the silicon interstitials generated during wet oxidation on the growth of microdefects in a two-step anneals. The low-high two-step anneal scheme using 650℃ as nucleation temperature and 1150℃ as growth temperature is the base-line process.
The results observed in this research is quiet different from what have been observed using 1000℃ as growth temperature. With a short nucleation anneal, the cluster precipitates is the dominant type of defect when growth temperature is 1000℃. However, when growth temperature is 1150℃, cluster precipitates is never found in these samples.
At 1150℃ anneal, the stacking faults length is very long , (10μm∼100μm),but density is low when nucleation anneal is short. When nucleation annealing time increase to 128h, the stacking faults become short, but uniform in length (4μm∼5μm), and density become high. A dissolution test is conducted to study the evolution of stacking faults at high temperature anneal.
The most striking result is that the short wet oxidation enhances the oxygen precipitation rate at 1150℃. This result is against conventional understanding about the role of silicon interstitials generated during oxidation.
Appears in Collections:材料科學與工程學系

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