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|標題:||Metal Induced Crystallization of Amorphous Silican
|關鍵字:||再結晶;crystallization;非晶質矽;金屬催化;多晶矽;薄膜電晶體;amorphous silican;metal induce;poly-Si;TFT||出版社:||材料工程學研究所||摘要:||
Semiconductor plays more and more important role in recent twenty years. With the advances of technology for semiconductor fabrication, the development of thin film transistor (TFT) also makes a lot of progresses. For example, TFT LCD has smaller volume and no radiation compared with CRT monitors. By the way, it shows better quality of display than other STN LCD. Although TFT made of amorphous silicon has offered satisfactory performance in display, poly-crystal silicon TFT has better electrical characteristics that could be used for even-demending device.
In our experiment, we use metal to induce the transformation of a-Si to poly-Si. Metal atoms diffuse into amorphous silicon to form nucleation sites and and heterogeneous nucleation occurs during annealing in furnace. Many kinds of metals can induce the transformation of a-Si to poly-Si.In this experiment, we choose copper and nickel as the catalyst element, and observed the lowering of the transformation temperature. However, small grain size(500nm) was obtained by this method. How to increasing the average grain size of poly-Si by metal-induced crystallization is another important and channelling issues?
|Appears in Collections:||材料科學與工程學系|
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