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標題: Control of oxygen precipitation rate and microdefect by two-step annealing in Cz silicon water
作者: 李鴻明
關鍵字: 氧凝聚速率;微缺陷;二階段退火熱處理
出版社: 材料工程學研究所

Two-step anneals were applied systematically to a set of commercial Cz silicon wafers. The oxygen precipitation rate was monitored by measuring the interstitial oxygen concentration in the silicon wafer. The types of microdefect were observed to vary with the time and temperature of the nucleation annealing. The density of cluster precipitation and punching-out dislocation decreased, but on the other side, the density of stacking fault increased with the increases of nucleation anneal time. This observation provided a very useful information relevant to the control of oxygen precipitation rate and microdefect in Cz silicon to improve the gettering efficiency.
Base on the oxygen precipitation data and microstructure observed from this research. A heat treatment process was suggested get a integrated circuit manufacturing.
Appears in Collections:材料科學與工程學系

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