Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/10065
標題: 以指叉狀背接觸電極結構研製單晶矽太陽能電池
Investigation of Interdigitated Back Contact Structure for Monocrystalline Silicon Solar Cells
作者: 姚祉光
Yao, Chih-Kuang
關鍵字: Interdigitated back contact;指叉狀背面電極;Solar cell;Wafer thickness;Wafer resistivity;Wafer lifetime;太陽電池;晶片厚度;晶片阻值;晶片載子生命週期
出版社: 材料工程學系所
摘要: 
在指叉狀背面電極太陽電池結構中,因為正負電極都置於晶片的背面,所以入射元件正面的光線將完全不會被遮蔽掉,如此可以增加入射光的強度。
本論文初期在設計與研發晶片測試用的標準製程,以高溫擴散搭配黃光製程的方式製作指叉狀背面電極結構的太陽電池,其中針對指叉狀電極圖形設計、磷擴散影響、氮化矽保護元件側壁、硼擴散深度、環繞式背電場影響與前電場磷擴散濃度影響等議題進行研究。最後則分析不同矽晶片的厚度、阻值及載子生命週期對利用標準製程製作出的太陽電池所造成之影響。
經由實驗結果發現,有磷擴散建立之背電場與前電場太陽電池,其二極體特性會較明顯,利用氮化矽保護元件側壁可降低逆向飽和電流,另外射極之擴散深度必須要淺,環繞式背電場可提升並聯電阻(0.31至1.8 Mohm),以及前電場磷擴散濃度不能太高。最後我們以標準製程製作出指叉狀背面電極太陽電池,元件的背面入光效率可達11.12 %、正面入光效率可達6.78 %。在晶片測試方面,我們發現晶片的厚度越薄(675至300 um),元件的效率越高(3.06 至7.26 %),較小的晶片阻值(6.37至4.92 ohm•cm)可得到較高效率的元件(0.95 至9.41 %),晶片的載子生命週期越長(35至169 us),元件的效率會越高(3.78 至 8.52 %)。

Recently, the interdigitated back contact solar cell (IBC-SC) has received much attention because the metal electrodes can be fabricated on the rear side of the cell. The IBC-SC has no shadowing effect. In this thesis, firstly, the process recipes including surface texturization, anti-reflection coating, and diffusion process were established. Then, the design and study of standard processes for the silicon wafer verification were performed. The IBC-SC was fabricated using high-temperature diffusion and photolithography techniques. The pattern design of interdigitated metal electrodes, phosphorus diffusion, SiNx passivation on cell edge, the depth of boron diffusion, the effect of back surface field (BSF) around, and phosphorus concentration of front surface field (FSF) were studied. Finally, the effects of silicon wafer thickness, resistivity, and lifetime on the IBC-SC performance were investigated.
The experimental results showed that the IBC-SC with BSF and FSF had more obvious diode characteristics. The SiNx passivation on cell edge had more obvious diode characteristics. Moreover, the emitter diffusion depth should be shallower. The pattern of BSF around could improve the shunt resistance (0.31 to 1.8 Mohm). Furthermore, a smaller FSF concentration was favorable. The conversion efficiency of 11.85 % on the rear side and 6.78 % on the front side for the IBC-SC fabricated using standard processes could be obtained.
For the wafer verification, it was found that the thinner wafer (675 to 300 um) could lead to higher cell efficiency (3.06 to 7.26 %). The smaller the wafer resistivity (6.37 to 4.92 ohm•cm), the higher the cell efficiency (0.95 to 9.41 %). The longer wafer lifetime (35 to 169 us) would also lead to higher cell efficiency (3.78 to 8.52 %).
URI: http://hdl.handle.net/11455/10065
Appears in Collections:材料科學與工程學系

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