Please use this identifier to cite or link to this item:
|標題:||Deposition of Silicon-Based Stacked Layers for Flexible Encapsulation of Organic Light Emitting Diodes||作者:||Chia-Hsun Hsu
|關鍵字:||encapsulation;inorganic silicon;organic light emitting diode;organic silicon||摘要:||
In this study, inorganic silicon oxide (SiOx)/organic silicon (SiCxHy) stacked layers were deposited by a radio frequency inductively coupled plasma chemical vapor deposition system as a gas diffusion barrier for organic light-emitting diodes (OLEDs). The effects of thicknesses of SiOx and SiCxHy layers on the water vapor transmission rate (WVTR) and residual stress were investigated to evaluate the encapsulation capability. The experimental results showed that the lowest WVTR and residual stress were obtained when the thicknesses of SiOx and SiCxHy were 300 and 30 nm, respectively. Finally, different numbers of stacked pairs of SiOx/SiCxHy were applied to OLED encapsulation. The OLED encapsulated with the six-pair SiOx/SiCxHy exhibited a low turn-on voltage and low series resistance, and device lifetime increased from 7 h to more than 2000 h.
|Appears in Collections:||材料科學與工程學系|
Show full item record
TAIR Related Article
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.