Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/10085
DC FieldValueLanguage
dc.contributor鍾朝安zh_TW
dc.contributorChao-An Chongen_US
dc.contributor張晃暐zh_TW
dc.contributorHung-Wei Changen_US
dc.contributor.advisor蔡佳霖zh_TW
dc.contributor.advisorJai-Lin Tsaien_US
dc.contributor.authorChi, Yung-Chiaen_US
dc.contributor.author紀永家zh_TW
dc.contributor.other中興大學zh_TW
dc.date2013zh_TW
dc.date.accessioned2014-06-06T06:44:08Z-
dc.date.available2014-06-06T06:44:08Z-
dc.identifierU0005-0302201210004600zh_TW
dc.identifier.citation[1] 林怡君,鋁鉑底層對鐵鉑薄膜磁性與微結構之研究,國立中興大學碩士論文,中華民國九十六年七月。 [2] 許芫榤,投影式電容觸控面板金屬導線蝕刻角度最佳化之研究,國立中興大學碩士論文,中華民國一百年一月。 [3] 蔡東璋、陳夢涵 ,” 統計製程管制應用於帄面顯示器之鋁金屬濕蝕刻製程能力探討” ,工業技術研究院電子工業中華民國品質學會第 40 屆年會高雄市分會第 30 屆年會 2004/11/6 暨第 10 屆全國品質管理研討會論文集,A2-7,第64-73 頁。 [4] 李正中,”薄膜光學與製程技術”,藝軒圖書出版社,2006。 [5] Jaydeep Sarkar,Tien-Heng Huang, Lih-Ping Wang, Peter H. McDonald,“ A combinatorial approach of developing alloy thin films using co-sputtering technique 76 for displays”, Chi-Fung Lo1 & Paul S. Gilman Science in China Series E: Technological Sciences, SCIENCE IN CHINA PRESS, 2009 [6] Toshioaki Arai, Atsuya Makita, Yasunobu Hiromasu, Hiroshi Takatsuji, “ Mo-capped Al-Nd alloy for both gate and data bus line of liquid crystal display”,Thin solid Films,Vol. 383, pp.287-291, 2001 [7] T.Ohnishi, E.Iwamura, K.Takagi,“Morphology of sputter deposited Al alloy films", Thin Solid Films, Vol.340, pp.306-316, 1999 [8] 洪大偉,”鋁釹與鉬鈮雙層閘極結構在蝕刻機制之邊緣輪廓及傾斜角研究“,台北科大化工研究所碩士論文,中華民國95年6月。 [9]Website:http://tw.myblog.yahoo.com/jw!XTUX8UqCHBZ1Qmnt5X212OiEir8-/article?mid=3 [10]Website:http://tw.myblog.yahoo.com/plasmaclean-creating/article?mid=9&prev=44&next=3&l=f&fid=23 [11] 蔡宗典,”超薄ITO透明電南台科技大學電機膜應用在觸控面板之研究”,中央大學光電科學研究所碩士學位論文,中華民國97年7月。 [12] Website:http://tw.knowledge.yahoo.com/question/question?qid=1206041305502 [13] Website:http://elearning.stut.edu.tw/m_facture/Nanotech/Web/ch3.htm [14] 射頻磁控濺鍍機(RF magnetron sputter)使用及管理辦法 奈米光電磁材料技術研發中心 國立台北科技大學。 [15] 維基百科,自由的百科全書。 [16] P.C.Kuo,Y.D.Yao,C.M.Kuo and H.C.Wu,J.Appl.Phys.87,6146(2000) [17] K.Barmak,J.Kim,L.H.Lewis,K.R.Coffey, M.F.Toney,A.J.Kellock,J.-U.Thiele,J.Appl.Phys.98,033904(2005) [18] H.S.Ko,A.Perumal,and S.C.Shin,Appl.Phys.Lett.82,2311(2003) [19] C.Feng,B.H.Li,G.Han,J.Teng,Y.Jiang,Q.L.Liu, G.H.Yu,Appl.Phys.Lett.88,232109(2006) [20] S.C.Chen,P.C.Kuo,S.T.Kuo,A.C.Sun,C.Y.Chou,Y.H.Fang,IEEE Trans.Magn.41,915 (2005) [21] J.Cho,M.park,H.S.Kim,T.Kato,S.lwata,S.Tsunashima, J.Appl.Phys.86,3149(1999) [22] Thaddeus B.Massalski. et.”Binary Alloy Phase Diagrams”,vol.2.ASM International, second printing(1990) [23] P.Villas,L.D.Calvert,”Binary Alloy Phase Diagrams”,vol.1,American Society For Metals,second printing(1987) [24] G.Birelus:J.Inst.Met.74,p.17(1948) [25] S.Y.Bae,K.H.Shin,J.Y.Jeong,J.G.Kim,J.Appl.Phys.87,6953(2000) [26] S.M.Rossnagel et al.,”Handbook of Plasma Processing Technology”,Noyes Publications,Park Ridge,New Jersey,U.S.A(1982) [27] B.D.Cullity,”Elements of X-ray Diffraction (Addision Wesley, Reading, MA,), 102 (1978) [28] E.P.Wohlfarth,J.Appl.Phys.29,595(1958). [29] S.R.Lee,S.Yang,Y.K.Kim,J.G.Na,J.Appl.Phys.91,6857(2002) [30] Brian Campman, ” Plasma” ,Glow Discharge Process,(John Wiley & Sons, New York, U.S.A.Chap3 (1980) .zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/10085-
dc.description.abstract鉻(Cr)它是一種銀色的金屬,質地堅硬,表面帶光澤,具有很高的熔點。鉻(Cr)在真空鍍膜的特性上,具有高密度、低穿透之特性,而且膜厚很容易被掌握。金屬鉻(Cr metal)膜厚在1100Å其反射率在波長550nm時約可達66%。 將金屬鉻(Cr metal)氧化(本實驗反應氣體為二氧化碳)可降低反射率至20%以下,在實驗前有通入氧氣來氧化金屬鉻(Cr metal),但通入氧氣氣體後製程壓力約在1.0m torr時,由外觀判定氧化程度嚴重不足(顏色呈現銀灰色,反射率約在25%以上無法達到要求),如果使用氧氣來氧化金屬鉻(Cr metal),在成本考量下,勢必會浪費很多金錢。 氧化鉻(CrxOy)氧化後反射率會下降,氧化到一定程度時有顏色的變化,搭配不同膜厚及反射率數值的氧化鉻,會有紅、黃、藍、紫、銀灰、黑色不同程度的顏色變化,可應用在液晶顯示器(LCD)上則作為低反射低穿透膜,通常最常用在黑色矩陣上(BM) 。金屬鉻(Cr metal)在與CO2氧化後其蝕刻速率會下降變慢,如果氧化持續變成三氧化二鉻Cr2O3時,膜質呈現透明無色的現象,Cr蝕刻液則無法蝕刻。氧化鉻(CrxOy)在添加N2真空鍍膜時,會有穩定氧化鉻的氧化反應作用,使其反射率數值變化程度縮小,對於氧化鉻(CrxOy)的反射率製程穩定上有很大的幫助,可提升製程良率。 氧化鉻(CrxOy)在添加N2真空鍍膜時,N2的添加有助於改善CrxOy薄膜不易蝕刻的特性,改善CrxOy的蝕刻速率,在掃描式電子顯微鏡(SEM)剖面觀察下,可改善CrxOy薄膜蝕刻後SEM剖面角度的助益,因此針對以上氧化鉻(CrxOy)應用在液晶顯示器(LCD)產業的相關問題提出研究,找出其特性,改善真空鍍膜氧化鉻(CrxOy)製程上的難度。zh_TW
dc.description.abstractCr is a silver metal, hard, shiny surface, high melting point.Chromium coating characteristics in vacuum, with a low penetration of high-density characteristics, and film thickness can easily be mastered.Chromium film thickness in the 1100Å reflectivity at a wavelength of about 550nm up to 66%. The chromium oxide (reaction gas is carbon dioxide in this experiment) can reduce the reflectivity to 20%, before the experiment with the oxygen to oxidize chromium, however, the oxygen gas pressure after the process is about 1.0m torr, the degree of oxidation determined by the appearance of a serious shortage of, (Silver-gray color showing reflectivity of about 25% can not meet the requirements), if you use oxygen to oxidize chromium, cost considerations, is bound to waste a lot of money. Chromium oxidation reflectivity will decrease to a certain degree of oxidation when the color changes, with different thickness and reflectivity values of chromium oxide, there will be red, yellow, blue, purple,, silver gray, black, different degrees of color change, on the LCD is used in low-penetration as a low-reflection film, often called the most commonly used on the black matrix (BM). Chromium oxide with CO2 after its slow etch rate will decline, if sustained into oxide of chromium oxide, the membranous phenomenon is transparent and colorless, Cr etching solution can not be etched.N2 in the vacuum coating chromium oxide added, there will be stable chromium oxidation effect, the degree of change to reduce the reflectivity values for the reflectivity of chromium oxide on the stabilization process is very helpful to improve process yield. Chromium oxide coating vacuum when you add N2, N2 is not easy to add help to improve the etching characteristics of CrxOy, observed by the SEM cross-section can be improved CrxOy film etched profile angle of the benefit, so the above application of chromium oxide in the LCD industry issues related to research, identify its characteristics, chromium oxide to improve the vacuum coating process more difficult.en_US
dc.description.tableofcontents封面內頁 審查頁 授權頁 致 謝…………………………………………………………………………………i 中文摘要 ……………………………………………………………………………ii Abstract………………………………………………………………………………iii 目 錄 ……………………………………………………………………………iv 圖 目 錄 ……………………………………………………………………………vi 表 目 錄 ………………………………………………………………………… viii 符號說明 ……………………………………………………………………………ix 第一章 緒論 ………………………………………………………………………1 1-1 前言 …………………………………………………………………………1 1-2 鉻(Cr)材料之發展 …………………………………………………………2 1-3 研究背景 ……………………………………………………………………4 1-3-1 研究背景……………………………………………………………4 1-4 研究動機………………………………………………………………………5 第二章 理論基礎與文獻回顧 ……………………………………………………7 2-1 理論基礎 …………………………………………………………………7 2-1-1 鉻(Cr)之結構………………………………………………………8 2-1-2 鉻(Cr)之組成………………………………………………………10 2-2 濺鍍原理 ……………………………………………………………………10 2-2-1 電漿原理……………………………………………………………11 2-2-2 直流放電……………………………………………………………12 2-2-3 磁控濺鍍法…………………………………………………………13 2-3 薄膜成長原理 ………………………………………………………………13 第三章 實驗方法與流程 ………………………………………………………15 3-1 實驗流程 ……………………………………………………………………15 3-2 實驗材料 ……………………………………………………………………16 3-2-1 靶材…………………………………………………………………16 3-2-2 基板清洗……………………………………………………………16 3-3 實驗設備 ……………………………………………………………………18 3-3-1 濺鍍系統裝置………………………………………………………18 3-3-2 濺鍍機操作步驟……………………………………………………20 3-3-3 參數設定……………………………………………………………20 3-4 試片分析及檢測 ……………………………………………………………21 3-4-1 膜厚與濺鍍速率量測………………………………………………21 3-4-2 光學密度(O.D)值量測…………………………………………… 21 3-4-3 反射率量測…………………………………………………………22 3-4-4 膜質蝕刻速率及掃描式電子顯微鏡(SEM)剖面…………………23 第四章 結果與討論 ………………………………………………………………25 4-1 鉻(Cr)薄膜之濺鍍速率分析 ……………………………………………25 4-2 鉻(Cr)薄膜膜厚與光學密度(O.D)值之關係 ……………………………26 4-3 鉻(Cr)/氧化鉻(CrxOy)薄膜與反射率曲線探討 …………………………27 4-4 鉻(Cr)/氧化鉻(CrxOy)薄膜與蝕刻速率探討 ……………………………32 4-5 氧化鉻(CrxOy)薄膜蝕刻後與掃描式電子顯微鏡(SEM)剖面探討………35 第五章 結論 ………………………………………………………………………42 參考文獻 ……………………………………………………………………………43zh_TW
dc.language.isozh_TWzh_TW
dc.publisher材料科學與工程學系所zh_TW
dc.relation.urihttp://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-0302201210004600en_US
dc.subjectCHIen_US
dc.subjectzh_TW
dc.title鉻、氧化鉻、氮化鉻光學薄膜之特性研究zh_TW
dc.titleOptical properties of Cr、CrxOy、CrxNy thin filmszh_TW
dc.typeThesis and Dissertationzh_TW
item.fulltextno fulltext-
item.languageiso639-1zh_TW-
item.openairetypeThesis and Dissertation-
item.cerifentitytypePublications-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.grantfulltextnone-
Appears in Collections:材料科學與工程學系
Show simple item record
 

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.