Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/10114
標題: 以水熱-化學電池法在鍍氮化鈦膜基材上製備鈦酸鋇膜與應用於天線之研究
Deposition and antenna application studies of barium titanate films by a hydrothermal-galvanic technique on TiN-coated substrates
作者: Chien, Chen-Mi
簡榛密
關鍵字: barium titanate;鈦酸鋇;hydrothermal-galvanic technique;antenna;水熱-化學電池法;天線
出版社: 材料科學與工程學系所
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摘要: 
本研究是利用水熱-化學電池法在TiN/Si上製備BaTiO3薄膜。再將BaTiO3製備成薄膜天線與電容,並研究其特性並探討應用。基材則利用物理氣相沉積法 (PVD) 以空氣為反應性氣體所製備的氮化鈦 (TiN) 薄膜並分析研究其材料特性。此方法乃本研究室專利以水熱-化學電池法,在溫度80℃以0.5M醋酸鋇 [Ba(CH3COO3)2] 及氫氧化鈉 (NaOH) 為反應溶液,於氮化鈦 (TiN) 薄膜之矽基材上製備BaTiO3氧化膜,並探究水熱-化學電池法製備功能性氧化膜之應用性。BaTiO3薄膜厚約83~150 nm。以水熱-化學電池法在TiN/Si上製備BaTiO3薄膜,經X光繞射分析顯示,皆有鈦酸鋇之訊號峰,在TiN/Si上成長出立方相BaTiO3薄膜。尚未有文獻探討以水熱-化學電池法製備BaTiO3薄膜應用於IEEE 802.11 b/g 之平面天線與MLCC電容之應用,本研究首創結合BaTiO3薄膜的材料將其實際應用於薄膜天線,可有效減少基板製程溫度及時間,且經本實驗之製備小尺寸天線可測得符合IEEE 802.11標準的無線區域網路b/g之平面天線。
將所製成的BaTiO3薄膜製作成偶極天線基材,發現可大幅縮減天線體積;而將其製作成小型薄膜電容量測其電性,電容會隨量測頻率頻段改變找到電容應用區段,進行電性分析結果顯示以水熱-化學電池法製備BaTiO3薄膜可應用在小型電容器。本研究成功設計小型偶極天線,可應用在射頻被動元件。測量其電壓駐波比、返回損失與輻射場形,頻寬1 GHz在1.9~2.9 GHz測出電壓駐波比小於2以下,利用HFSS模擬軟體模擬出可以使用之結構尺寸,找出不同材料介質Air、PCB (FR4) 、Si、TiN及BaTiO3的尺寸後進行實驗,而BaTiO3 介質 (30×17×0.5 mm3 )上的金屬輻射面積可縮到 (30×5 mm2),與空氣介質比輻射面積可縮小45%,與 PCB比較尺寸可縮小31%,並且討論此天線所量測之電壓駐波比、增益、返回損失等結果與特性。可適用IEEE 802.11 b/g之通訊規格。藉由本研究的結果証實,可對此新穎材料製程於元件應用上有更大的幫助。

This research is to synthesize epitaxial-like BaTiO3 films on TiN/Si substrate by the hydrothermal-galvanic technique. Using the BaTiO3 film to make the thin-film antenna and capacitor, and to study their characteristics and to explore applications. We grow the (TiN) film and use the air as the reaction gas on the substrate by the physical vapor deposition (PVD) method, and to analyze the material properties after the process.''Barium titanate films by a hydrothermal-galvanic technique on TiN-coated substrates at low temperatures 80℃”. The patent of the method belongs to our laboratory.A mixing solution of 0.5 M barium acetate (Ba(CH3COO)2) and 2 M sodium hydroxide (NaOH) as the electrolyte, to grow the BaTiO3 oxide film on the titanium nitride (TiN) film based silicon substrate, and to study characteristics of the oxide film and to discuss their applications. The BaTiO3 film thickness is about 83 to 150 nm. By the XRD results, it is successful to grow the cubic BaTiO3 films by the hydrothermal and hydrothermal-galvanic coupling techniques.
There is no any application of the BaTiO3 film in IEEE 802.11 b/g planar antenna and MLCC capacitors which is produced by hydrothermal-galvanic coupling techniques. BaTiO3 film is used as the dipole antenna substrates of the microwave devices in this research. It is the first time to apply the BaTiO3 film material to the film antenna. It is effective to reduce the substrate processing temperature and the growing time. By this research, the small dimension antenna is successfully applied to IEEE 802.11 b/g standard wireless LAN plane antenna.
Using the BaTiO3 films as the dipole antenna substrate, it is effective to reduce the antenna dimension. Using the BaTiO3 films to manufacture the small film capacitance and to measure its electrical properties, the variation of capacitance depends on the frequency. We can find the capacitor applications frequency. According to the electrical analysis of BaTiO3 films, the hydrothermal-galvanic technique method can be applied in a small capacitor. The BaTiO3 film is successfully applied to a small dimension dipole antenna by using hydrothermal-galvanic coupling techniques in this research. We measure the antenna parameters, such as VSWR, return loss and gain. The antenna bandwidth is 1 GHz (from 1.9 to 2.9 GHz). The VSWR is less than 2. We use the HFSS to simulate the structure dimension and to identify different materials applications, such as dielectric Air, PCB (FR4), Si, TiN and BaTiO3 and to do the experiment according to the simulation. Using the BaTiO3 as the dielectric, the dielectric dimension is 30 × 17 × 0.5 mm3. It is effective to reduce 30 × 5 mm3 , which compare to air as the dielectric. The dimension is reduced about 45%, and the PCB dimension is reduced by 31%. From the antenna parameters measurement, we can use this antenna to WLAN application.The research reveal the great potential of utilizing the new approach to synthesize epitaxial-like BaTiO3 films on TiN/Si substrate by the hydrothermal-galvanic technique, and using the BaTiO3 film to make the thin-film antenna or capacitor for other applications.
URI: http://hdl.handle.net/11455/10114
其他識別: U0005-0702201222080700
Appears in Collections:材料科學與工程學系

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