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標題: 具不同厚度鍍銀層之氧化銦錫薄膜經熱處理後熱電特性之變化
Thermoelectric Properties of Annealed Indium Tin Oxide Coated with Silver of Different Thicknesses
作者: 陳隆政
Chen, Long-Jheng
關鍵字: Thermoelectric;熱電材料;Indium Tin Oxide;ITO;氧化銦錫
出版社: 材料科學與工程學系所
引用: [ 01 ] H. C. Lee, O. O. Park, “The evolution of the structural, electrical and optical properties in indium -tin-oxide thin film on glass substrate by DC reactive magnetron sputtering”, Vacuum 80 (2006) 880-887. [ 02 ] A. Hultåker, K. Järrendahl, H. Lu, C. G. Granqvist, G. A. Niklasson, “Electrical and optical properties of sputter deposited tin doped indium oxide thin films with silver additive”, Thin Solid Films 392 (2001) 305-310. [ 03 ] H. Odaka, Y. Shigesato, T. murakami, S. Iwata, “Electronic Structure Analysis of Sn-doped In2O3”, Japan Journal of Applied Physics (2001) 3231-3235. [ 04 ] G. B. González ,T. O. Mason, J. P. Quintana, O. Warschkow, D. E. Ellis, J. H. Hwang, J. P. Hodges, J. D. Jorgensen, “Defect structure studies of bulk and nano-indium-tin oxide”, Journal of Applied Physics 96 (7) (2004) 3912. [ 05 ] H. Han, J. W. Mayer, T. L. Alford, “Effect of various annealing environments on electrical and optical properties of indium tin oxide on polyethylene napthalate”, Journal of Applied Physics 99 (2006) 123711. [ 06 ] Y. S. Jung, Y. W. Choi, H. C. Lee, D. W. Lee, “Effects of thermal treatment on the electrical and optical properties of silver-based indium tin oxide / metal / indium tin oxide structures”, Thin Solid Films 440 (2003) 278-284. [ 07 ] L. Lin, F. Lai, Y. Qu, R. Gai, Z. Huang, “Influence of annealing in N2 on the properties of In2O3:Sn thin films prepared by direct current magnetron sputtering”, Material Science and Engineering B 138 (2007) 166-171. [ 08 ] G. Gampet, S. D. Han, S. J. Wen, M. C. R. Shastry, B. Chaminade, E. Marquestaut, J. Portier, P. Dordor, “Correlation between the thermoelectric power and Hall effect of Sn or Ge doped In2O3 semiconductors”, Material Science and engineering B22 (1994) 274-278. [ 09 ] F. Kurdesau, G. Khripunov, A.F. Da Cunha, M. Kaelin, A.N. Tiwari, “Comparative study of ITO layers deposited by DC and RF magnetron sputtering at room temperature”, Journal of Non-crystalline Solids 352 (2006) 1466-1470. [ 10 ] R. X. Wang, C. D. Beling, S. Fung, A. B. Djurišic, C. C. Ling, and S. Li, “Influence of gaseous annealing environment on the properties of indium-tin-oxide thin films”, Journal of Applied Physics 97 (2005) 033504. [ 11 ] H. R. Fallah, M. Ghasemi, A. Hassanzadeh, “Influence of heat treatment on structural, electrical, impedance and optical properties of nanocrystalline ITO films grown on glass at room temperature prepared by electron beam evaporation”, Physica E 39 (2007) 69-74.

由X射線繞射結果顯示,氧化銦錫薄膜經熱處理後結晶性增加,隨著鍍銀層厚度的增加,熱處理後之結晶性亦有增加的趨勢。以四點探針量測電阻率,發現當鍍銀層厚度為4.2 nm與6.3 nm時,能獲得最低之電阻率。而由場發射掃瞄式電子顯微鏡結果顯示,隨著鍍銀層厚度增加與熱處理製程,薄膜晶粒尺寸有增加的趨勢。當鍍銀且經熱處理後,薄膜之Seebeck係數由負值變為正值,而當鍍銀層厚度為4.2 nm時,量測得最高的正值Seebeck係數並可算出最高的功率因子,而光穿透率卻維持大於90%,符合高熱電功率因子且高光穿透率材料設計的需求。

Indium tin oxide (ITO) thin films were prepared by DC magnetron sputtering on glass substrates, silver layers of different thicknesses were deposited onto ITO by ion beam sputtering and the samples were annealed at 250℃ for 1 hour. This process changes the ITO film from a negative thermoelectric material into positive one. The variation of thermoelectric, structural, physical and optical properties were measured by means of an in-house thermoelectric measuring system, X-ray diffractometer (XRD), field-emission scanning electron microscope (FESEM), Hall effect measuring system, four-point probe and UV/visible Spectrophotometer respectively.
XRD and FESEM results show that the crystallinity and grain size increase after annealing and increase with increasing thickness of silver layer. The lowest electric resistivity measured by four-point probe was obtained in the samples coated with 4.2 nm and 6.3 nm silver layers. The ITO film coated with a 4.2 nm silver layer possesses the optimum positive Seebeck coefficient and thermoelectric power factor, meanwhile, its maximum optical transmittance was still above 90%.
其他識別: U0005-0707200616221000
Appears in Collections:材料科學與工程學系

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