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|標題:||Hot-Wire Chemical Vapor Deposition of Si-Based Thin Films for Heterojunction Solar Cell Applications
|關鍵字:||hot-wire chemical vapor deposition (HWCVD);熱燈絲化學氣相沉積;Si film;two step growth;SiC film;heterojunction solar cell (HJ solar cell);矽薄膜;二階段成長法;碳化矽薄膜;異質接面太陽電池||出版社:||材料科學與工程學系所||引用:||1. A. Fahrenbruch and R.H. Bube, "Fundamentals of solar cells: photovoltaic solar energy conversion", Academic press, New York, p. 9 (1983) 2. W. Adams and R. Day, "The Action of Light on Selenium", Proc. R. Soc., vol. 25, pp. 113-117 (1876) 3. D. Chapin, C. Fuller, and G. Pearson, "A New Silicone pn Junction for Converting Solar Radiation into Electric Power", J. Appl. Phys., vol. 25, pp. 676-677 (1954) 4. P. Verlinden, R. Sinton, and R. Swanson, "High efficiency large area back contact concentrator solar cells with a multilevel interconnection", Int. J. Sustain. Energy, vol. 6, pp. 347-366 (1988) 5. D. Reynolds, G. Leies, L. Antes, and R. Marburger, "Photovoltaic effect in cadmium sulfide", Phys. Rev., vol. 96, pp. 533-534 (1954) 6. J.A. Bragagnolo, A.M. Barnett, J.E. Phillips, R.B. Hall, A. 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Habraken, "Hot-wire produced atomic hydrogen: effects during and after amorphous-silicon deposition", Thin Solid Films, vol. 395, pp. 87-91 (2001) 109. B. Pantchev, P. Danesh, E. Liarokapis, B. Schmidt, J. Schmidt, and D. Grambole, "Effect of post-hydrogenation on the structural properties of amorphous silicon network", Jpn. J. Appl. Phys., vol. 43, pp. 454-458 (2004) 110. R.E.I. Schropp and M. Zeman, "Amorphous and microcrystalline silicon solar cells : modeling, materials, and device technology", Kluwer Academic, Boston, p. (1998) 111. D. Das and K. Bhattacharya, "Characterization of the Si : H network during transformation from amorphous to micro- and nanocrystalline structures", Journal of Applied Physics, vol. 100, pp. (2006)||摘要:||
Hot-wire chemical vapor deposition (HWCVD) is one of the semiconductor fabrication processes to grow thin film materials. The HWCVD system is composed of vacuum system, gas flow controls, and catalytic wires where Tungsten, Tantalum or Iridium are often used. In a typical HWCVD process, the temperature of wire can increase to 1500~2000 by increasing the DC current. The source gases are entered into the vacuum chamber and decomposed (or catalyzed) by the high temperature wires. The substrate is exposed to one or more volatile precursors which react or decompose on the substrate surface to produce the desired deposit.
The dissertation introduces the solar cell research evolution and the lately study of Si film. It also overviews the mechanisms of hot-wire chemical vapor deposition (HWCVD) and plasma enhanced chemical vapor deposition (PECVD). The advantages and the disadvantages of these two CVD are presented and compared. The study in the dissertation is using the HWCVD system and depositing Si based films for photovoltaic applications. The results includes four subjects of “Growth and characterization of intrinsic Si film”, “Deposition and characterization of poly-Si thin films using a two-step growth method”, “Deposition and characterization of p-type nanocrystalline Si (p-nc-Si) films for photovoltaic applications” and “Deposition and characterization of p-type nanocrystalline Si (p-nc-SiC)films for photovoltaic applications”.
The intrinsic Si film such as amorphous, microcrystalline and polycrystalline have grown by HWCVD. The influence of deposition parameters such as substrate temperature and hydrogen dilution ratio has been presentation. Based on the identification of hydrogen dilution, a two-step growth method with high/low hydrogen dilution ratios was studied. In the two-step growth process, a thin seed layer was first grown on the glass substrate under high hydrogen dilution ratio and then a thick over layer was subsequently deposited upon the seed layer at a lower hydrogen dilution ratio. The amorphous Si incubation layer could be suppressed greatly in the initial growth of poly-Si film with the two-step growth method. In the subsequent poly-Si film thickening, a lower hydrogen dilution ratio value of the reactant gases can be applied to enhance the deposition rate. The electrical properties were also enhanced. The effects of H2 on the characteristics of p-nc-Si and p-nc-SiC films were analyzed. The optimized parameters of p-nc-Si and p-nc-SiC films were applied as emitter layer in the Si HJ solar cells. The 12.5 % and 14.09 % of photovoltaic conversion efficiencies could be obtained, respectively. These are very encouraging results for the industrial fabrication of high efficiency heterojunction solar cells by using HWCVD technique.
|Appears in Collections:||材料科學與工程學系|
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