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標題: 以化學水浴法製備優選方向氧化鋅奈米柱結構應用於氮化銦鎵發光元件
Fabrication of Well-aligned ZnO Nanorods Architectures on InGaN-based Light Emitting Diodes with Seed Layer via Chemical Bath Deposition
作者: 林明秀
Lin, Ming-Shiou
關鍵字: ZnO;氧化鋅;LED;nanostructures;GaN;發光二極體;奈米結構;氮化鎵
出版社: 材料科學與工程學系所
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第一個實驗:氧化鋅奈米柱陣列成功以化學水浴法沉積晶種層,並選擇性生長於 p-type GaN:Mg layer 於低溫 (85oC)下。藉由汞燈輔助照射,氧化鋅奈米柱於水溶液中合成,生長在p-type GaN:Mg layer上的晶種層之直徑5μm的微米孔洞陣列圖案(Micro-Hole array patterns )內。由場發射掃描式電子顯微鏡(FE-SEM)生觀察得到生長完的氧化鋅奈米柱的直徑為500nm,高度為3μm。由X-ray繞射分析儀(XRD)可發現結晶性良好。而能量散布光譜儀(EDS)可計算出其成份之化學計量比,鑑定其化學組成與純度。氧化鋅奈米柱的生長優選方向、表面形貌與長寬比例,均侷限於微米孔洞陣列圖案裡,並獲得有效控制。而經由其光致激發螢光光譜(PL)可得波長位於384 nm的藍光波段。
第二個實驗:本研究以化學水浴沉積法及汞燈輔助照射,在以濺鍍法沉積氧化鋅鋁晶種層上製備氧化鋅奈米柱(Zinc oxide Nanorods on Sputtering seed layer, ZNS),並進而利用微米孔洞陣列(Micro-Hole Array, MHA)控制氧化鋅奈米柱之生長,及在以脈衝雷射法沉積氧化鋅鋁晶種層上製備氧化鋅奈米柱(Zinc oxide Nanorods on Pulsed laser deposition seed layer, ZNP)之發光二極體元件(Light Emitting Diode, LED),對其進行各種分析探討。
由場發射掃描式電子顯微鏡及X-ray繞射分析儀觀察氧化鋅鋁晶種層及氧化鋅奈米柱發現,以脈衝雷射法沉積之氧化鋅鋁晶種層,表面具有平整晶界明顯之晶粒,顯示其結晶性良好且沿(002)優選方向排列,接續以化學水浴沉積法於此晶種層生長氧化鋅奈米柱,可得到大量沿(002)優選方向生長之奈米柱。透過場發射高解析度穿透式電子顯微鏡,可佐證氧化鋅奈米柱之結晶性質及優選方向,利用顯微光激發螢光光譜可定義氧化鋅奈米柱結構之形成與光激發螢光波長及強度關係,ZNP LED之氧化鋅訊號強度高於ZNS LED,證實氧化鋅奈米柱生長於以脈衝雷射法沉積氧化鋅鋁晶種層上具有較好之光激發性質。
在元件發光強度對直流注入電流特性曲線量測中,ZNP LED及ZNS LED在20mA直流注入電流下,相較標準發光二極體元件各有54.3%及40.7%的光強度提升。在發散角特性量測中,我們觀察到ZNP LED及ZNS-MHA LED在發散角度上的改變,造成此兩種元件場型上的變化是來自於氧化鋅奈米柱結構之形成,產生與標準發光二極體元件不同光取出機制。由實驗結果可了解,利用化學水浴沉積法以及汞燈輔助照射所製備出的氧化鋅奈米柱結構,在發光元件上具有極大的應用潛力。

In this thesis, our experiments were performed as two parts.
For the first experiment, the ZnO nanorod arrays were selective-growth on a p-type GaN:Mg layer effectively through a chemical bath deposition (CBD) at a low temperature hydrothermal synthesis (85oC) with a ZnO seed layer. The 5μm-diameter hole-array patterns of the ZnO seed layer were grown on a p-type GaN:Mg layer in aqueous solution with a mercury lamp illumination. The diameter and the height of ZnO nanorods were measured as the values of 500nm and 3μm, respectively. The preferred orientation, the surface morphology, and the aspect ratio of the ZnO nanorods can be controlled and formed on the hole-array patterned ZnO seed layer. The peak wavelength of the photoluminescence spectrum was measured at 384 nm
For the second experiment, chemical bath deposition and mercury lamp illumination were used to synthesize ZnO nanorods (Zinc oxide Nanorods on Sputtering seed layer, ZNS) on aluminum zinc oxide (AZO) seed layer deposited by sputtering and then micro hole array (Micro-Hole Array, MHA) was utilized to control the growth of ZnO nanorods. ZnO nanorods (Zinc oxide Nanorods on Pulsed laser deposition seed layer, ZNP) was cultivated on AZO seed layer deposited by pulsed laser deposition on the light-emitting diode (LED) for various analysis and measurements.
The field emission scanning electron microscopy and lower X-ray diffractometer were used to observe the AZO seed layer and the ZnO nanorods. The surface morphology of AZO seed layer deposited by pulsed laser deposition (PLD) has clear boundaries and obvious grains that indicated excellent crystallinity along the (002) preferred orientation. The well-aligned ZnO nanorod structure preferred oriented along the (002) direction was deposited on the AZO seed layer through a chemical bath deposition process. The ZnO nanorods structures and preferred orientation were also demonstrated shown in the micrograph of the field emission high resolution transmission electron microscopy. The photoluminescence intensity of the ZNP LED is higher than ZNS LED that indicated the higher optical property of the ZnO nanorods grown on the PLD deposited AZO seed layer.
The light output power of ZNP LED and ZNS LED have 54.3% and 40.7% enhancement compared to the standard LED devices at 20mA injection current. According to divergence angle measurement, we observed the difference of ZNP LED and ZNS-MHA LED, which results from the structures of ZnO nanorods affect the light extraction mechanism. ZnO nanorods structures are fabricated by chemical bath deposition with mercury lamp illuminated have potential applications on the InGaN-based LEDs to increase the light extraction efficiency.
其他識別: U0005-2807201116454500
Appears in Collections:材料科學與工程學系

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