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標題: 以射頻磁控濺鍍法製備矽鍺熱電薄膜與用於氫感測之研究
Silicon-Germanium thermoelectric thin films prepared by RF magnetron sputtering and their application on hydrogen gas sensing
作者: Tung, Kuan-Lin
關鍵字: 熱電薄膜;thermoelectric thin films;矽鍺薄膜;Seebeck係數;氫感測;感測器;碳纖維布;鉑觸媒;SiGe thin films;Seebeck coefficient;hydrogen gas sensing;senser;activated carbon fiber cloth;Pt catalyst
出版社: 材料科學與工程學系所
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實驗結果顯示,於基板溫度500℃,成份為Si92Ge8時的載子濃度2.5×1010 cm-3及電阻率2.0×106 Ω•cm,而其Seebeck係數為271 mV/K。氫感測結果顯示,越高的Seebeck係數有越高之感應電壓輸出,能產生最高160 mV之輸出訊號值。

N-type Silicon-germanium thermoelectric thin films were prpeared on silicon substrates the by RF magnetron sputtering process. The sputtering target was a phosphorous-doped silicon target attached with germanium chips. The substrate temperature were rared room temperature to 500℃ in a step of 100℃. We examined the microstructure, film thickness, composition, crystallinity, carrier concentiation, mobility, resistivity, Seebeck coefficient and H2 sensing voltage by field emission scanning electron microscopy, electron spectroscopy for chemical analysis, X-ray diffractometer, Hall effect measasurement, Seebeck coefficient measurement and hydrogen sensor measurement. By changing the substrate temperature, we expected to prepare SiGe thin films with different Seebeck coefficients, and used then in hydrogen sensing test.
We use a simple in-house system for hydrogen sensing. The activated carbon fiber cloth was utilized as a support for the Pt catalyst on thermoelectric sensor 3% hydrogen was inlet used in all tests.
The results showed that as the substrate temperature was 500℃, Si92Ge8 has a carrier concentration of 2.5×1010 cm-3, resistivity of 2.0×106 Ω•cm and Seebeck coefficient of 271 mV/K. The results of hydrogen sensing test show that sensing voltage increased with increasing Seebeck coefficient, and the maximum voltage signal is 160 mV.
其他識別: U0005-2506200714022100
Appears in Collections:材料科學與工程學系

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