Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/10568
DC FieldValueLanguage
dc.contributor馮哲川zh_TW
dc.contributorZhe-Chuan Fengen_US
dc.contributor陳思翰zh_TW
dc.contributorSy-Hann Chenen_US
dc.contributor.advisor林佳鋒zh_TW
dc.contributor.advisorChia-Feng Linen_US
dc.contributor.author陳奎廷zh_TW
dc.contributor.authorChen, Kuei-Tingen_US
dc.contributor.other中興大學zh_TW
dc.date2010zh_TW
dc.date.accessioned2014-06-06T06:45:30Z-
dc.date.available2014-06-06T06:45:30Z-
dc.identifierU0005-3107200711182200zh_TW
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dc.identifier.urihttp://hdl.handle.net/11455/10568-
dc.description.abstract本論文中利用光輔助電化學氧化及氧化物蝕刻製程,在氮化銦鎵發光二極體磊晶片之p型氮化鎵磊晶層表面製作具圖型化奈米多孔隙結構之微米孔洞陣列(nanoporous micro-hole array, NMHA)及微米圓盤陣列(nanoporous micro-disk array, NMDA)發光二極體元件。我們利用顯微光激發螢光光譜來定義奈米孔隙結構之形成與光激發螢光波長及強度關係。在電激發光光譜量測上,NMDA-LED有較明顯之波長藍移現象,可歸因於量子井發光層經由局部壓縮應力釋放後壓電場減小與能帶變得平緩所導致。在電激發光光譜波長對直流注入電流特性曲線中,亦發現到NMDA-LED發光元件比起標準試片有較少的波長藍移量,而NMHA-LED元件則是與標準試片有著相近的波長藍移量,由此可觀察出NMDA結構具有較明顯的應力釋放現象。在元件發光強度對直流注入電流特性曲線量測中,NMHA及NMDA發光二極體在20 mA的直流注入電流下各有12.3%及20.6%的光強度提升。在元件電性量測部分,可以觀察到元件的順向操作電壓與串聯電阻會隨著元件表面奈米多孔隙結構之面積比例增加而有增大趨勢。在遠場輻射(far-field radiation)特性的量測之中,我們觀察到NMHA-LED及NMDA-LED在遠場輻射圖型上的改變,造成此兩種元件在場型上的變化,是來自於兩者在結構上的差異而使得元件產生不同光取出機制。 另一方面,在NMHA-LED及NMDA-LED之太陽能電池特性量測中,我們發現藉由將奈米多孔隙結構製作於p型氮化鎵層表面時,對於氦鎘雷射光的激發產生了極大的吸收效應,可產生額外的光激發載子於量子井中結合發光。在頻譜響應量測中,發現到p型氮化鎵表面的奈米孔洞結構對於入射光之轉換效率是遠高於多重量子井發光層的,因此在元件表面具有較大比例奈米多孔隙結構的NMDA-LED元件比起NMHA-LED元件,其頻譜響應峰值更往短波長飄移了10 nm而更接近氮化鎵材料能隙吸收。由實驗結果可以了解,利用光輔助電化學氧化及氧化物蝕刻製程所製作出的奈米孔隙結構,在發光元件與光伏元件上具有極大的應用潛力。zh_TW
dc.description.abstractIn this thesis, the InGaN-based light emitting diodes (LEDs) with nanoporous micro-pattern array structures have been study. The pattern-nanoporous p-type GaN:Mg surface of the InGaN-based LEDs was fabricated through a photoeletrochemical wet oxidation and oxide-removal process. The formation mechanism of nanoporous structures was also discussed. The blueshift phenomenon of the PL emission peaks were observed that the compress strain in the InGaN active layer was partial released by adding the PEC cycle times and forming the nanoporous structure. The blueshift phenomenon of the electrolumescence (EL) spectra in nanoporous micro-disk array LED structure were observed that could be caused by adding the roughened area on micro-disk array pattern than the micro-hole array pattern. At 20 mA operation current, the light output power of the nanoporous micro-hole array and micro-disk array LEDs had 12.34% and 20.6% enhancement compared with the standard LEDs, respectively. The different in far-field emission patterns were observed in these nanoporous micro-pattern array LEDs. The internal quantum efficiency and light extraction efficiency of an InGaN/GaN MQW active layer are increased by forming the nanoporous structure on p-type GaN:Mg surface. This PEC treated nanoporous structure is suitable for high-power lighting applications. The photovoltaic effect of these nanoporous micro-pattern array devices was analyzed. The spectral response was toward short wavelength region by adding the nanoporous area on the mesa region. The LED structure with the nanoporous micro-pattern structure had the higher external quantum efficiency at the UV region that had a potential application in the InGaN-based solar cell devices.en_US
dc.description.tableofcontents中文摘要...................................................i 英文摘要..................................................ii 總目錄....................................................iv 圖目錄....................................................vi 第一章 序論................................................1 1-1 前言...................................................1 1-2 簡介...................................................1 1-3 研究動機...............................................3 第二章 原理與文獻回顧......................................5 2-1 LED發光原理及外部量子效應..............................5 2-2 提升外部量子效應的方法.................................6 2-3 光輔助電化學氧化法.....................................9 2-4 壓電場(Piezoelectric Field)的形成.....................11 2-4-1 應變(Strain)的產生..................................11 2-4-2 壓電效應(Piezoelectric Effect)......................12 第三章 實驗方法與步驟....................................28 3-1 氮化鎵試片製備........................................28 3-2 光輔助電化學氧化之實驗流程............................33 3-3 光輔助電化學氧化之實驗裝置............................34 3-4 分析儀器..............................................34 3-4-1 顯微光激發螢光光譜(u-PL)............................34 3-4-2 場發射掃描式電子顯微鏡(Field Emission Scanning Elctron Microscope, FE-SEM)...............................38 3-4-3 發散角量測(radiation pattern measurement)...........38 3-4-4 光學顯微鏡(Optical microscope,OM)...................39 第四章 圖形化奈米孔洞氮化銦鎵發光二極體探討...............40 4-1 表面形貌分析..........................................41 4-1-1 奈米孔洞結構表面形貌................................41 4-1-2 奈米孔洞結構形成的定義..............................42 4-1-3 奈米孔洞結構的形成機制..............................44 4-2 微米孔洞及微米圓盤陣列圖型化奈米孔洞結構應用於氮化銦鎵發光二極體..................................................45 4-2-1 微米孔洞及微米圓盤陣列圖型化奈米孔洞結構發光二極體之顯微光激發螢光光譜分析......................................46 4-2-2 微米孔洞及微米圓盤陣列圖型化奈米孔洞結構發光二極體之電激發螢光特性及電性分析....................................47 4-2-3 微米孔洞及微米圓盤陣列圖型化奈米孔洞結構發光二極體之遠場光輻射圖形分析..........................................51 4-3微米孔洞及微米圓盤陣列圖型化奈米孔洞結構應用於氮化銦鎵太陽能電池元件..............................................52 4-3-1太陽能電池特性量測系統架構...........................53 4-3-2雷射光激發下的電激發螢光波長及強度特性量測...........54 4-3-3微米孔洞及微米圓盤陣列圖型化奈米孔洞結構於氮化銦鎵太陽能電池元件特性量測........................................55 第五章 結論與未來展望.....................................88 5-1 結論..................................................88 5-2 未來展望..............................................89 參考文獻..................................................90zh_TW
dc.language.isoen_USzh_TW
dc.publisher材料科學與工程學系所zh_TW
dc.relation.urihttp://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-3107200711182200en_US
dc.subjectInGaN-based ligh emitting diodesen_US
dc.subject氮化銦家發光二極體zh_TW
dc.subjectphotoeletrochemicalen_US
dc.subject光輔助電化學zh_TW
dc.title利用光輔助電化學技術製作具圖形化 奈米多孔隙結構之氮化銦鎵發光元件zh_TW
dc.titleInGaN-based Light Emitting Diodes with the Pattern-Nanoporous Structures through Photoelectrochemical Processen_US
dc.typeThesis and Dissertationzh_TW
item.languageiso639-1en_US-
item.openairetypeThesis and Dissertation-
item.cerifentitytypePublications-
item.grantfulltextnone-
item.fulltextno fulltext-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
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