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Fabrication and Characterization of Low-Defect-Density GaN Templates
|關鍵字:||GaN;氮化鎵;maskless;dislocation;low-defect-density;templates;無光罩;差排;低缺陷;模板||出版社:||材料科學與工程學系所||引用:|| N. Holonyak, Jr., and S. F. Bevaqua, “Coherent (visible) light emission from Ga(As1–xPx) junctions,” Appl. Phys. Lett. vol.1, p.82, 1962.  K. H. Kim, Z. Y. Fan, M. Khizar, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, “AlGaN-based ultraviolet light-emitting diodes grown on AlN epilayers,” Appl. Phys. Lett. vol.85, p.4777, 2004.  G.E. Stillman, V.M. Robbins, and N. Tabatabaie, “Ⅲ-V compound. semiconductor devices: Optical detectors,” IEEE Trans. Electron Devices vol.31, p.1643, 1984.  Shuji Nakamura, “In situ monitoring of GaN growth using interference effects,” Jpn. J. Appl. Phys. vol.30, p.1620, 1991.  J. I. Pankove, “Gallium nitride (GaN) I,” Academic press, San Diego, 1998.  H. P. Maraska, D. A. Stevenson, and J. I. Pankove, “Violet luminescence of Mg-doped GaN,” Appl. Phys. Lett. vol.22, p.303, 1973.  S. Yoshida, S. Misawa, and S. 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Yang, “Spatially resolved cathodoluminescence of laterally overgrown GaN pyramids on (111) silicon substrate: Strong correlation between structural and optical properties,” Appl. Phys. Lett. vol.80, p.1141, 2002.||摘要:||
我們分別比較使用與沒使用低缺陷氮化鎵磊晶模板成長氮化鎵磊晶膜之缺陷差異。以高解析雙晶繞射儀、蝕刻孔洞密度法、光激發光光譜圖、陰極螢光光譜圖與影像圖分析結果顯示，有使用低缺陷氮化鎵磊晶模板成長之氮化鎵磊晶膜，其高解析雙晶繞射對稱面(0002)面 rocking curve半高寬降低20%，非對稱面(30-32)面rocking curve半高寬降低21%，蝕刻孔洞密度可有效降低至2.3×105 cm-2，光激發光譜半高寬亦降低至7.06 nm，陰極螢光影像亦有缺陷集中與降低的趨勢。最後我們利用穿透式電子顯微鏡之影像，證實氮化鎵薄膜成長於低缺陷氮化鎵磊晶模板，可阻擋差排向上延伸，使差排彎曲，降低差排缺陷密度，進而提升氮化鎵磊晶薄膜的品質。
The purpose of this study is to characterize low-defect-density GaN templates fabricated in our laboratory and assess their material as well as optical properties. The fabrication of low-defect-density GaN templates was carried out by selection etching technique and removing technology. The etched pits on the GaN surface shown in scanning electron microscopy (SEM) images were considered as screw dislocations, which were intentionally subjected to remove process to expose the surface without screw dislocations. The observations form Energy Dispersive System (EDS) and SEM images confirmed that low-defect-density GaN templates were successfully fabricated in this study.
The difference on material and optical properties between regrown GaN on low-defect-density GaN templates and on sapphire substrate was evaluated by using High-resolution x-ray diffraction (XRD), Etch-pits density (EPD), Photoluminescence (PL), and Cathodoluminescence (CL). The GaN grown on low-defect-density GaN templates had lower EPDs of around 2.3×105 cm-2 as compared with that of the GaN regrown on sapphire substrate (ca. 1.5×106 cm-2). The full width at half maximum (FWHM) of GaN (0002) and (30-32) rocking curve were decreased by 20% and 21%, respectively while depositing on low-defect-density GaN templates. Furthermore, PL spectra and CL images implied the better quality of regrown on low-defect-density GaN templates.
The transmission-electron-microscopy (TEM) images gave us an solid evidence that the dislocation density of regrown was significantly reduced with low-defect-density GaN templates. These TDDs can be terminated by the mask.
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