Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/10600
DC FieldValueLanguage
dc.contributor張守一zh_TW
dc.contributor黃泓文zh_TW
dc.contributor.advisor林佳鋒zh_TW
dc.contributor.author吳怡宏zh_TW
dc.contributor.authorWu, Ei-Hongen_US
dc.contributor.other中興大學zh_TW
dc.date2010zh_TW
dc.date.accessioned2014-06-06T06:45:33Z-
dc.date.available2014-06-06T06:45:33Z-
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dc.identifier.urihttp://hdl.handle.net/11455/10600-
dc.description.abstract本論文利用P型氮化鎵表面粗化技術,應用於提升氮化銦鎵太陽能電池之光耦合效率,所採用粗化技術包含奈米壓印技術製作週期性光子晶體孔洞結構與光輔助電化學氧化技術製作圖形化奈米多孔隙結構。在具光子晶體氮化銦鎵發光元件中,當提升在P型氮化鎵之乾式電漿蝕刻深度至0.2微米時,在顯微光激發螢光光譜分析實驗中觀察到螢光強度提升,可得知光子晶體結構在P型氮化鎵粗化製程可有效提升光取出與耦合效率。所以在蝕刻後之光子晶體試片在太陽能電池效率上高於標準試片,可得到較高之光電流輸出、較高電光功率與外部量子效率。在具奈米結構之圖型化微米孔洞與微米圓盤陣列之氮化銦鎵太陽能電池之特性量測中,可以觀察到在元件表面製作多孔隙結構可以增加入射光的吸收及耦合效率,使氮化銦鎵太陽能電池效率高於標準試片。氮化銦鎵多重量子井結構發光層波長為450nm,氮化鎵能隙寬度波長為364nm。在標準氮化銦鎵元件材料於380nm具有較高之外部量子效率,此為量子井結構吸收所致。當製作奈米多孔隙結構於P型氮化鎵表面時,可提高光耦合效率,在太陽能電池效率之頻譜響應量測中,可同時提升多重量子井中氮化銦鎵位能井與氮化鎵位障層之光吸收效應,可觀察較寬頻譜響應之波長範圍。我們成功利用光輔助電化學氧化及氧化物蝕刻製程,將微米圖型化之奈米孔洞結構應用太陽能電池元件的應用之中,藉由不同的圖型產生的奈米孔洞面積比例不同,在太陽能電池的頻譜響應中改善短波長波段之響應效率。zh_TW
dc.description.abstractIn this thesis, the surface roughened processes on p-type GaN layer are used to increase the light coupling efficiency for the InGaN based solar cell devices applications. The surface roughened processes consisted of the photonic crystal structures fabricated through the nano-imprinting process and the nanoporous structure fabricated through the photoeletrochemical oxidation process. In the InGaN-baed solar cell with the photonic crystal structures, the higher photoluminescence intensity was observed by increasing the dry etching depth on p-type GaN:Mg layer. The larger external quantum efficiency of the InGaN-based solar cell was measured by forming the photonic crystal structures on p-type GaN:Mg layer. In patterned nanoporous structure of the InGaN-based solar cell structure, the higher light absorption and light coupling efficiency are increased by forming the photoeletrochemical treated nanoporous structure. The energy bandgap of the InGaN/GaN multiple quantum wells (MQWs) active layers and the GaN epitaxial layers are located at 450nm and 364nm. The peak external quantum efficiency was observed at 380nm in the standard InGaN-based solar cell structure which was absorbed by the InGaN active layer. By forming the patterned nanoporous structure on p-type GaN:Mg layer, the peak wavelength of the external quantum efficiency was shifted to 370nm. The wider response wavelength range and higher external quantum efficiency of the PEC treated InGaN solar cell was observed that was caused by increasing the light absorption process in InGaN wall layer and GaN barrier layer in MQW active layer. The optimums external quantum efficiency of the InGaN-based solar cell can be obtained by increasing the nanoporous area on the mesa region.en_US
dc.description.tableofcontents誌謝 III 中文摘要 IV 英文摘要 V 總目錄 VI 圖目錄 VII 第一章 序論 - 1 - 1-1 前言 - 1 - 1-2 氮化銦鎵光伏(Photovoltaic)特性簡介 - 1 - 1-3 研究動機 - 2 - 第二章 原理與文獻回顧 - 4 - 2.1太陽光電池種類 - 4 - 2.2太陽光電池基本原理 - 5 - 2.3太陽光電池電氣特性 - 8 - 2.4氮化銦鎵太陽光電池期刊文獻之探討 - 10 - 第三章 實驗儀器架構與流程 - 15 - 3-1 太陽光電池量測裝置 - 15 - 3-2顯微光激螢光譜(μ-PL) - 17 - 3-3場發射掃描式電子顯微鏡(FE-SEM) - 18 - 3-4 試片製備 - 18 - 第四章 系統架構與實驗結果分析 - 21 - 4-1 光子晶體簡介 - 21 - 4-2 光子晶體試片實驗結果 - 22 - 4-3微米孔洞及微米圓盤陣列圖型化奈米孔洞試片結構實驗結果 - 29 - 4-3-1奈米孔洞結構表面形貌 - 29 - 4-3-2奈米多孔隙試片之顯微光激發螢光光譜分析 - 32 - 4-3-3雷射光激發下的電激發螢光波長及強度特性量測 - 34 - 4-3-4奈米多孔隙試片於氮化銦鎵太陽能電池元件特性量測 - 36 - 第五章 結論 - 43 - 參考文獻 - 44 -zh_TW
dc.language.isoen_USzh_TW
dc.publisher材料科學與工程學系所zh_TW
dc.subjectsolar cellen_US
dc.subject光伏元件zh_TW
dc.subjectInGaNen_US
dc.subject氮化銦鎵zh_TW
dc.title氮化銦鎵光伏元件特性分析zh_TW
dc.titleCharacterization of InGaN-based solar cellen_US
dc.typeThesis and Dissertationzh_TW
item.grantfulltextnone-
item.openairetypeThesis and Dissertation-
item.languageiso639-1en_US-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.cerifentitytypePublications-
item.fulltextno fulltext-
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