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標題: 鐵矽化物奈米結構與矽基材的界面性質及光學特性之研究
Interfacial and optical properties of iron silicide nanostructures on silicon substrates
作者: 吳黃源
Wu, Huang-Yuan
關鍵字: FeSi2;鐵矽化物;Reactive Deposition Epitaxy;反應式磊晶法
出版社: 材料科學與工程學系所
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本研究利用反應式磊晶法在矽基材上生長奈米尺寸的鐵矽化物,並改變蒸鍍量、基材溫度、熱處理時間及不同類型矽基材上生成鐵矽化物奈米顆粒,探討不同製程條件生成之鐵矽化物奈米結構與矽基材的界面性質及其光學特性。研究結果顯示,2 nm Fe/n-Si(100)持溫10 min於基材溫度500℃時為Type B FeSi(CsCl) or Type B γ-FeSi2以及少量β-FeSi2共存;基材溫度600℃時為β-FeSi2、Type A和Type B γ-FeSi2及α-FeSi2共存,且β-FeSi2會由γ-FeSi2相轉變而來;基材溫度700℃時為高溫穩定相α-FeSi2;α-FeSi2及β-FeSi2傾向於突出基材表面, FeSi(CsCl)及Type B γ-FeSi2會鑲埋於基材中。另外,隨著持溫時間的增加奈米顆粒的型態改變、尺寸縮小,鐵矽化物的相轉變也持續發生。
以PL進行鐵矽化物之光性量測,並結合鐵矽化物奈米顆粒結構、基材種類與PL發光性質分析,推測波峰位於1616 nm及1656 nm為不純物存在於γ-FeSi2與矽基材界面所致。而位於1300 nm-1600 nm的寬廣波峰為β-FeSi2及磷的參雜所引起的,且隨持溫的時間增加,奈米顆粒的形貌改變及尺寸減小,引發尺寸效應使PL強度增加。

Iron silicide nanoparticles were grown on Si substrate by reactive deposition epitaxy at various temperatures. Fe thin films, 2 and 5 nm in thickness, were deposited on n-type and p-type Si substrates at 500-700 °C and were further annealed in situ at the same temperature for 10 min to 4 hr. The reactions of Fe and Si substrates, the structure properties of the silicide nanoparticle/Si substrate interfaces and optical properties of iron silicide nanoparticles were studied by SEM, AFM, TEM and PL analyses. The results show as follows. Type-B FeSi(CsCl) or γ-FeSi2 nanoparticles and a few of β-FeSi2 nanoparticles were formed at 500 ºC. Type-A and type-B γ-FeSi2, α-FeSi2 and β-FeSi2 nanoparticles coexisted in the samples that were deposited at 600 ºC. β-FeSi2 was transformation from γ-FeSi2. α-FeSi2 phase was predominant in the sample that was deposited at 700 ºC. Among these iron silicide nanoparticles, α-FeSi2 and β-FeSi2 nanoparticles tended to protrude out of the Si substrate and FeSi(CsCl) and γ-FeSi2 nanoparticles preferred to embed in the Si substrate.
From the results of PL analysis of the iron silicide precipitates formed in various processes on n-type and p-type Si substrates type, PL peaks at 1616 nm and 1656 nm are the emission due to impurities at interface at γ-FeSi2 nanoparticles/Si substrates. The broad peak at the range of 1300 nm to 1600 nm can be attributed to the intrinsic emission of semiconducting β-FeSi2 with P dopant. In addition, the shape and size of the nanoparticles altered and reduced, respectively, with the increase of the annealing time, which caused that the intensity of PL peaks increased.
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