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標題: 氣相傳輸法合成銻摻雜碲化鍺一維奈米結構與其相變化記憶體特性的探討
Synthesis of Sb-doped GeTe one-dimensional nanostructures by vapor transport process and their memory-switching behavior
作者: 陳仕憲
Chen, Shih-Hsien
關鍵字: 相變化記憶體;PRAM;奈米線;碲化鍺;氣相傳輸法;nanowire;GeTe;VLS
出版社: 材料科學與工程學系所
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One-dimensional phase-change GeTe and Sb-doped GeTe nanostructures were successfully synthesized by vapor transport method. The phase-change nanowire were synthesized on the Au-coated Si substrates in the furnace with source temperature of 560℃ and substrate temperature of 450℃ under Ar/H2 40% gas flow. The diameters of GeTe and Sb-doped GeTe nanowires, which could be controlled by the thickness of Au catalyst, were found to range from 120 to 300 nm and the lengths were up to 10 μm. The crystalline structures and compositions of the as-synthesized products were identified by X-ray diffraction (XRD), Transmission electron microscope (TEM) and Energy dispersive spectrometer (EDS). The results confirmed that the GeTe and Sb-doped GeTe nanowires were single crystals with a rhombohedral structure. The Au nanoparticles could be observed on the tips of nanowires, which is a strong evidence of VLS growth mechanism. The GeTe nanowires were fabricated into single-nanowire PRAM devices by Focus ion beam (FIB), and the device could be successfully switched from low resistance state to high resistance state. We believe that PRAM nanodevices with low reset current and high endurance can be fabricated using GeTe nanowires if suitable substrate and measuring instrument are utilized.
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