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標題: 投影式電容觸控面板金屬導線蝕刻角度最佳化之研究
The research of optimized metal wire etching angle for Projective capacitive touch panels
作者: 許芫榤
Hsu, Yuan-Chieh
關鍵字: TFT;薄膜電晶體;Mo-Nb/Al-Nd;Indium Tin Oxide;SiO2;Touch panel;HNO3;CH3COOH;H3PO4;DC Sputter;RF Sputter;鉬-鈮/鋁-釹;氧化銦錫;二氧化矽;觸控式面板;硝酸;醋酸乙酸;磷酸;直流磁控濺鍍;射頻磁控濺鍍
出版社: 材料科學與工程學系所
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薄膜電晶體(TFT)製程中需經歷多次成膜,而第一層之閘極金屬對後續絕緣層或金屬層之覆蓋性相對重要。此一關鍵即是閘極金屬蝕刻後邊緣需有平緩之傾斜角,以利各層之覆蓋。目前薄膜電晶體(TFT)金屬導線用於閘極(Gate)、源極/汲極(S/D),鉬(Mo)/鋁-釹(Al-Nd) 雙層結構用於閘極(Gate)、鉬(Mo)/鋁-釹(Al-Nd) /鉬(Mo)三層結構用於源極/汲極(S/D );現今觸控式面板(Touch panel)也是利用鍍膜方式沉積三層堆疊的金屬結構,蝕刻走線形成金屬導線。
本文利用不同合金成分的金屬靶,使用直流磁控濺鍍(DC sputter)方式,在玻璃基板表面沉積金屬薄膜,再利用濕蝕刻方式,硝酸(HNO3 8.5%)/醋酸(CH3COOH 4%)/磷酸(H3PO4 65%)/蝕刻溫度45℃條件測試單層合金的蝕刻速率,尋求最適合的合金成分組合,鉬-鈮(Mo-Nb 10at%)/鋁-釹(Al-Nd 1wt%=0.2at%)/鉬-鈮(Mo-Nb 10at%),並找出三層金屬堆疊最佳膜厚搭配比100Å/1700~2100Å/500Å做出優化的金屬蝕刻角度<60°,使製程較易控制,讓二氧化矽(SiO2)製程覆蓋之穩定性更佳,提升金屬導線的耐化性及信賴性。

In the process of manufacturing thin film transistor (TFT), there are several thin film patterns need to be established. However, with the second layer, isolation, covering on the first layer, gate, which made with metal, the covering quality is relatively more important to TFT capability through the whole manufacture process. The key factor influences the covering quality due to gate profile. The gate profile with a mild slope facilitates the rest of layers to have a proper covering performance. At present day, TFT applies metal as the conductor material to gate, source and drain, Mo/Al-Nd double metal layers structure applies to gate, Mo/Al-Nd/Mo triple metal layers structure applies to source and drain. For modern touch penal also applies triple metal layers structure made with depositing and etching method to form metal conductor trace.
In this article, we apply several different component metal targets with DC sputter method. Deposit thin metal film on glass substrate, then we wet etch the thin metal film by the etchant compose of HNO3 8.5%, CH3COOH 4% and H3PO4 65% with temperature at 45C, we put single layer alloy film into the etching condition and monitor the etching rate. Then we have a conclusion that the most proper component of alloy ratio as Mo-Nb 10at%/Al-Nd 1wt%=0.2at%/Mo-Nb 10at%, and the most proper thickness ratio for triple layers as Mo-Nb(100Å) / Al-Nd(1700~2100Å) / Mo-Nb(500Å). Combining the condition above etchant, alloy ratio and thickness ratio for triple layers, we can have a superior profile of triple layers with slope angle under 60 to generate an easier control system to manufacture process and more stably covering performance with SiO2 layer and furthermore increase the chemical resistance and reliability.
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