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標題: 熱燈絲化學氣相沉積法製備碳化矽/單晶矽異質接面太陽電池
Fabrication and Characterization of SiC:H/c-SiHeterojunction Solar Cells Using Hot-wire CVD
作者: 楊鎮宇
Yang, Jhen-Yu
關鍵字: Si HJ;矽異質接面太陽電池;window layer;SiC;hot-wire CVD;H2 flow ratio;入光層;熱燈絲化學氣相沉積法;碳化矽;氫氣流量分率
出版社: 材料科學與工程學系所
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透過優化的碳化矽薄膜,結合各項製程步驟,開發Al/ITO/p-type Si-NCs:SiC films/intrinsic a-Si:H/n-type c-Si:H/ITO/Ag/Al 結構的矽異質接面太陽電池,成功製作開路電壓為520mV、短路電流密度42.5 mA/cm2,效率達14.50%的光轉換元件。

Silicon heterojunction solar cell (Si-HJ) is one of the most promising structures with low cost and high conversional efficiency. In this kind of cell, a window layer with wide optical band gap characteristic is demanded. In this study, wide band gap boron-doped Si nanocrystals embedded in silicon carbide films (Si-NCs:SiC) were prepared by hot-wire chemical vapor deposition for Si-HJ window layer applications. The SiH4, B2H6, H2 and CH4 were used as source gas.
The material properties of the prepared Si-NCs:SiC films were characterized by Fourier-transform infrared spectrometer, X-ray diffractormeter, X-ray photoelectron spectrometer, Raman spectrometer, field emission scanning electronic microscopy, Hall and n&k analyzer. The experimental results indicate that the H2 flow ratio plays an important role in the chemical composition, microstructure, optical and electronic properties of the Si-NCs:SiC films. It was found that the crystalline fraction of Si-NCs:SiC films increased with the increasing of H2 flow ratio. The optical band gap and doping concentration show the positively correlation, while the resistivity and active energy show the negatively correlation with the carbon contents of the Si-NCs:SiC films. The enhancement in Si-C stretching mode and opposite the Si-H wagging mode as the carbon contents of the Si-NCs:SiC films were increased.
After the optimization of p-type Si-NCs:SiC deposition parameters, we fabricated the Si-HJ with structures of Al/ITO/p-type Si-NCs:SiC films/intrinsic a-Si:H/n-type c-Si:H/ITO/Ag/Al and characterized the cell performance. Finally, the Si-HJ cell with conversion efficiency of 14.50 %, open-circuit voltage of 520 mV, and short-circle current density of 42.5 mA/cm2 was achieved.
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