Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/10876
標題: 熱燈絲化學氣相沉積法製備碳化矽/單晶矽異質接面太陽電池
Fabrication and Characterization of SiC:H/c-SiHeterojunction Solar Cells Using Hot-wire CVD
作者: 楊鎮宇
Yang, Jhen-Yu
關鍵字: Si HJ;矽異質接面太陽電池;window layer;SiC;hot-wire CVD;H2 flow ratio;入光層;熱燈絲化學氣相沉積法;碳化矽;氫氣流量分率
出版社: 材料科學與工程學系所
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摘要: 
矽異質接面太陽電池因同時具備低成本與高效能的特點而受到重視,為了追求更高的光線轉換效率,可嘗試提升此元件窗口層的光學能隙。有鑑於以上目標,本研究利用熱燈絲化學氣相沉積法,在SiH4、B2H6、H2和CH4等工作氣體的反應下,製備嵌入(embedded)奈米晶矽的寬能隙硼摻雜碳化矽薄膜,並實際應用於矽異質接面太陽電池入光層。

為確定碳化矽薄膜性能,使用傅立葉轉換紅外光譜儀、X光繞射分析儀、X射線光電子能譜儀、拉曼光譜儀、場發射掃描式電子顯微鏡、霍爾效應量測以及n&k光學量測系統,對嵌入奈米晶矽的碳化矽薄膜進行材料分析。實驗發現,氫氣的流量分率在薄膜化學組態、微結構與光電特性上,扮演著十分重要的角色。研究結果指出,氫氣流量分率增加可提升矽膜結晶率;膜的碳含量對光學能隙及摻雜濃度具正相關,電阻率和活化能則呈現負相關。除此之外,Si-C也隨膜內含碳量的提高有增強的趨勢,而Si-H反之。

透過優化的碳化矽薄膜,結合各項製程步驟,開發Al/ITO/p-type Si-NCs:SiC films/intrinsic a-Si:H/n-type c-Si:H/ITO/Ag/Al 結構的矽異質接面太陽電池,成功製作開路電壓為520mV、短路電流密度42.5 mA/cm2,效率達14.50%的光轉換元件。

Silicon heterojunction solar cell (Si-HJ) is one of the most promising structures with low cost and high conversional efficiency. In this kind of cell, a window layer with wide optical band gap characteristic is demanded. In this study, wide band gap boron-doped Si nanocrystals embedded in silicon carbide films (Si-NCs:SiC) were prepared by hot-wire chemical vapor deposition for Si-HJ window layer applications. The SiH4, B2H6, H2 and CH4 were used as source gas.
The material properties of the prepared Si-NCs:SiC films were characterized by Fourier-transform infrared spectrometer, X-ray diffractormeter, X-ray photoelectron spectrometer, Raman spectrometer, field emission scanning electronic microscopy, Hall and n&k analyzer. The experimental results indicate that the H2 flow ratio plays an important role in the chemical composition, microstructure, optical and electronic properties of the Si-NCs:SiC films. It was found that the crystalline fraction of Si-NCs:SiC films increased with the increasing of H2 flow ratio. The optical band gap and doping concentration show the positively correlation, while the resistivity and active energy show the negatively correlation with the carbon contents of the Si-NCs:SiC films. The enhancement in Si-C stretching mode and opposite the Si-H wagging mode as the carbon contents of the Si-NCs:SiC films were increased.
After the optimization of p-type Si-NCs:SiC deposition parameters, we fabricated the Si-HJ with structures of Al/ITO/p-type Si-NCs:SiC films/intrinsic a-Si:H/n-type c-Si:H/ITO/Ag/Al and characterized the cell performance. Finally, the Si-HJ cell with conversion efficiency of 14.50 %, open-circuit voltage of 520 mV, and short-circle current density of 42.5 mA/cm2 was achieved.
URI: http://hdl.handle.net/11455/10876
Appears in Collections:材料科學與工程學系

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