Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/11132
標題: 砷化鎵晶圓接合界面氧化層及其界面性質之第一原理計算
First-Principles Calculations of Interfacial Oxide Layer and Its Properties for Bonded GaAs Wafers
作者: 邱孝豪
Chiou, Shiao-Hao
關鍵字: VASP;晶圓接合;GGA;DFT;LDA
出版社: 材料工程學系所
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摘要: 
目前對於直接晶圓接合已經有許多研究,在光電元件領域中晶圓接合扮演著一個重要角色。然而,複雜的接合界面對電性會造成嚴重影響,因此,我們利用根據廣義梯度近似(GGA)的VASP(Vienna Ab-initio Simulation Package)程式研究砷化鎵晶圓順相與反相接合界面處的原子結構與電性質。從模擬計算得知,順相與反相接合界面平衡距離分別為2.44Å和2.39Å,此外,我們模擬砷化鎵晶圓接合界面氧化物Ga2O3並藉由multislice方法來探討它的影響在高解析影像。最後,探討模擬的界面氧化物Ga2O3結果並與實驗結果來做比較。

There are many investigations for direct wafer bonding, which play an important role in the optoelectronic device filed. However, the interface can have serious influence in the electrical performance. Therefore, we study the atomic structure and electrical property of interface in wafer bonding for in-phase and anti-phase arrangements according to the generalized gradient approximations (GGA) following the VASP (Vienna Ab-initio Simulation Package) code. From the simulations, the equilibrium distance of interface for the in-phase and anti-phase bondings are 2.44Å and 2.39Å respectively. Beside, we simulate the interfacial oxide Ga2O3 between GaAs wafers and discuss its influence on the high resolution image by the multislice method. In the end, the simulation results of interfacial Ga2O3 are discussed and compared with experiment results.
URI: http://hdl.handle.net/11455/11132
Appears in Collections:材料科學與工程學系

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