Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/11192
標題: 磁控濺鍍氧化鋅鋁(ZnO:Al)薄膜之特性與應用研究
Characterization and Applications of ZnO:Al (AZO) Thin Films Prepared by Magnetron Sputtering
作者: 盧志銘
Lu, Chih-Ming
關鍵字: Cosputtering;混鍍;Photoelectric properties;Microstructure;光電性質;微結構
出版社: 材料工程學系所
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摘要: 
隨著時代的進步,各種電子產品不斷推陳出新,因應製程上的需要,許多半導體材料不斷被開發與應用,尤其在光電產業當中,透明導電薄膜是一項不可或缺的材料,它大量的運用在許多光電元件的製造上。

本研究同時利用射頻(RF)濺射氧化鋅靶材及直流(DC)濺射鋁靶材進行混鍍沉積氧化鋅鋁(ZnO:Al)薄膜,並利用熱處理改變薄膜的性質,對於濺鍍後與退火後之薄膜,利用分光光譜儀(UV/VIS)分析薄膜之光學特性,X光繞射儀(XRD)分析晶體結構,場發射掃描式電子顯微鏡(FE-SEM)分析薄膜之表面形貌和成長結構,並以原子力顯微鏡(AFM)觀察薄膜三維空間的表面型態,電性方面利用四點探針(Four-Point)和霍爾效應儀(Hall Effect)量測電阻率、載子濃度和電子遷移率,並利用穿透式電子顯微鏡(TEM)對試片做微區分析,成分方面則是使用X光光電子能譜儀(XPS)來做定性和定量分析。

AZO薄膜在鋁摻雜量為4.31%時獲得最低電阻率為2.58×10-4(Ω-cm),具有高載子濃度1.25×1021(cm-3)與遷移率13.67(cm2/V-sec)。摻雜鋁的確提高薄膜結晶性,ZnO(002)優選方向較未摻雜前明確,於高摻雜的情況下則會造成晶格扭曲,使其(002)優選方向偏移,摻雜後在可見光範圍穿透率平均都在90%以上,隨著載子濃度增加,能隙值變大,產生Burstein-Moss(BM)效應。分析結果以RF:125W與DC:200W所製備之AZO薄膜為光電性質優良的TCO薄膜,可以取代目前工業上所使用的ITO薄膜。

於氧氣氛中退火,因氧空缺減少使電阻率提高;於Forming gas中退火,薄膜內的氧空缺增加,載子濃度增加,使得電阻率降低,獲得最低電阻率為8.95×10-5(Ω-cm),經氣氛退火後其導電機制主要受氧空缺多寡所影響。氣氛退火後薄膜穿透率皆有些許提昇,Forming gas下退火可以看到明顯的藍移現象。

製作p-c-Si/i-Si/n-Si/AZO結構之異質接面矽太陽能電池,經半導體參數分析儀量測其I-V曲線,獲得Voc=0.59V,Jsc=30mA/cm2,曲線因子F.F.為63.07%,實際效能約為11.16%。

Transparent conducting oxide (TCO) is an important material for many photoelectronic devices. In this study, transparent conducting ZnO thin films doped with Al (ZnO:Al) were prepared by simultaneously RF magnetron sputtering of ZnO target and DC magnetron sputtering of Al target. Post annealing of the ZnO:Al (AZO) films were carried out under Ar, N2, O2, and forming gases at temperatures ranging from 300 to 500℃. Optical and electrical properties of the AZO films were measured by an UV/Visible spectrophotometer and four-point probe and Hall effect, respectively. Microstructure and morphology of the films were studied by X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), and analytical transmission electron microscopy (ATEM). In addition, the composition and binding states of the films were characterized by electron spectroscopy for chemical analysis (ESCA).

It was found that doping with Al could improve the crystallinity and (002) preferred orientation of the ZnO films. The average optical transmittance of the AZO films is higher than 90%. The band gap energy increases with the dopant concentration due to Burstein-Moss effect. The AZO film prepared at RF:125 W and DC:200W shows the lowest resistivity of 2.58 x 10-4 (Ω-cm) with carrier concentration of 1.25 x 1021 (cm-3) and mobility of 13.67 (cm2/V-sec) at Al content of 4.31%. Annealed in O2, the resistivity of the AZO films increases significantly. In contrast, the AZO film annealed in forming gas demonstrate the lowest resistivity of 8.95 x 10-5 (Ω-cm).
Made a p-c-Si/i-Si/n-Si/AZO structure heterojunction solar cells, after measured I-V curve, the Voc=0.59V, Jsc=30mA/cm2, F.F. of 63.07%, efficiency of 11.16%.

Keywords: Cosputtering; Photoelectric properties; Microstructure
URI: http://hdl.handle.net/11455/11192
Appears in Collections:材料科學與工程學系

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