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標題: 以原子層沉積法進行氧化鋁薄膜之成長與特性研究
Growth and Characterization of Al2O3 Thin Films Using Atomic Layer Deposition
作者: 賴宜楓
Lai, Yi-Feng
關鍵字: 原子層沉積技術;Atomic layer deposition;氧化鋁;水氣透過率;表面處理;Aluminium oxide;WVTR;surface pretreatment
出版社: 材料科學與工程學系所
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實驗結果顯示,當製程溫度為200℃,前驅物三甲基鋁與水的氣體注入時間分別為0.1秒與0.3秒,並藉由前驅物三甲基鋁與水的輪流曝露作為前處理,是製程的最佳條件。膜厚方面則以20nm之氧化鋁薄膜之水氣阻障效果最佳,可將原本水氣透過率(WVTR)為60 g/m2/day的聚乙醯胺基板降低至0.289 g/m2/day (40℃,濕度90%,測試時間72小時) 的效果。如果相較於本實驗室過去以電漿輔助化學氣相沉積法之結果,例如成長於聚碳酸酯基板(WVTR=30 g/m2/day)之50 nm SiO2阻障層其水氣透過率為1.369 g/m2/day,而50 nm厚之SiNx阻障層其水氣透過率為0.173 g/m2/day,以原子層沉積技術成長之氧化鋁薄膜具有極佳之阻水性質,未來將有機會可以進一步應用於商業有機發光二極體製之封裝製程上。

Organic light-emitting diodes (OLEDs) have been widely used in high-contrast and wide-view-angle flat panel displays. Because OLEDs are extremely sensitive to moisture, the transmission of water vapor in device package becomes an important issue to protect the water-induced degradation. Deposition of the barrier layers, such as SiO2 and SiNx prepared by plasma-enhanced chemical vapor deposition (PECVD) is one of the fundamental methods to resolve this problem.
In this thesis, we focus on the optimization of growth parameters of Al2O3 inorganic thin films depositing by atomic layer deposition (ALD), and further applied as barrier to minimizing penetration of moisture. Experimental procedure is carried out by repeating the deposition cycle of trimethylaluminum (Al(CH3)3, TMA) adsorption and oxidation by pure water. At the beginning, we deposited Al2O3 at different temperatures. Pulse time of H2O precursor was tuned to develop an optimal condition for Al2O3 thin film growth. After the optimization of deposition parameters, various thickness of Al2O3 thin films were prepared to discuss the transmission rates of water vapor and transmittance. It is found that the permeation characteristics of Al2O3 could be further improved by introducing the pretreatment step in the initial stage during ALD process. This improvement is mainly due to the interaction enhancement between substrate and precursor during the pretreatment. In addition, the superiority of ALD-deposited Al2O3 thin films is proved by comparing to the PECVD-deposited SiO2 and SiNx barriers.
Under optimized deposition conditions, the water vapor transmission rate (WVTR) for polyimide substrate can be reduced from 60 g/m2/day (bare substrate, 40℃ and 100% RH during 72 hours) to 0.289 g/m2/day by coating a 20 nm-thick Al2O3 barrier film. This result is better than the PECVD barrier samples on polycarbonate substrates, e.g., 50 nm-thick SiO2 barrier (WVTR=1.369 g/m2/day), and 50 nm-thick SiNx barrier (WVTR=0.173 g/m2/day). It is a promising result for further application in OLEDs using these high-quality ALD-deposited Al2O3 barrier films.
其他識別: U0005-2808201322083900
Appears in Collections:材料科學與工程學系

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