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標題: 成長鎳矽化物/矽異質結構奈米線及其氣體感測性質之研究
Fabrication of Nickel Silicide/Si Heterostructure and their Gas Sensing Properties
作者: 陳俊安
Chen, Chun-An
關鍵字: 原子力顯微鏡;Atomic force microscopy;鎳矽化物奈米線;氣體感測;Nickel silicide nanowire;Gas sensing
出版社: 材料科學與工程學系所
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經由以矽(100)與矽(111)面基板蒸鍍相當於製作異質結構奈米線時的鎳厚度,進行不同矽晶面的成核機制討論,發現(100)面成長的NiSi2為一個六面體的結構,於(111)面成長的NiSi2為一個五面體的結構,使在(111)基材生成之NiSi2具有較低的表面能使成核時之活化能較低,因此NiSi2在Si (111)面較易成核,而同時在具有(111)及(100)面的奈米線,成長NiSi2時較易於(111)面上成核,因此在(111)面上之NiSi2的晶粒數目較高。

Recentli, the size of electronic device approaches to limitations of Moore''s law. One dimension nanostructures are attractive study in the future due to their unique photoelectrice characteristics. Metal silicides have excellent electric properties in nanoscale. Moreover, nickel silicides are promising materials for applying in the nanoelectronic device because of their low Si consumption and thermal stability. Scanning probe lithography can operate in air and fabricate nanostructure simply. Using reactive deposition epitaxy (RDE) can promote the epitaxial growth of metal silicide on silicon. We expect that it can be used in the formation of multiple Ni-silicide/Si heterostructures.
In this study, Si oxide nanowires were fabricated on SOI substrates by AFM field induced. Future, Si nanowires were fabricated by aselective wet etching. Furthmorw, the effects of deposition amount on the formation of silicide were studied.
The result show that when Ni:Si ratio less than 1/80 has reactants appear in the local. When the Ni:Si ratio is 1/8 can be formed multiple Ni-silicide/Si heterostructures nanowires. Ni:Si ratio add to 1/4 may make nanowire complete reaction to nickel silicide, and we found that nickel silicide grains are concentrated on the (111) plan in the initial reaction.
By silicon (100) and (111) substrate evaporation equivalent nickel thickness when made of heterostructures nanowires, carry out nucleation mechanisms discussed with different silicon surface. Found that the (100) plan growth NiSi2 is a hexahedral structure, and the (111) plan growth NiSi2 is a pentahedron structure. So that the (111) substrate to generate NiSi2 have lower surface energy lead to lower activation on the nucleation. While having (100) and (111) plane nanowires is easier growth NiSi2 on (111) plane. Therefore, on (111) plane have more number of NiSi2 grains.
The gas sensing properties for response of nickel silicide nanowires is better than silicon nanowires. The response of silicon nanowire is 177%, and response of silicon nanowire with nickel silicide nanograins could be up to 361%, and response of multiple Ni-silicide/Si heterostructures nanowires could be up to 237%.
其他識別: U0005-2208201323172200
Appears in Collections:材料科學與工程學系

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