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標題: 利用紫外線圖案化鋯鈦酸鉛薄膜
Patterning of Lead Zirconate Titanate Thin Film by ultraviolet-light
作者: 張爵堂
Chang, Chueh-Tang
關鍵字: 鋯鈦酸鉛;PZT;圖案化;光解焦化;Pattern;Photolysis
出版社: 機械工程學系所
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利用紫外光做光解焦化之鋯鈦酸鉛薄膜其殘留極化量為21.4 μc/cm2、矯頑電場為45 kV/cm和漏電流為0.027。相對於利用加熱板做焦化時之鋯鈦酸鉛薄膜其殘留極化量為17.24 μc/cm2、矯頑電場為104 kV/cm、漏電流為0.043。實驗結果發現,相較於加熱板焦化作用之鋯鈦酸鉛薄膜,利用紫外光解焦化作用之薄膜有較佳的鐵電性質。利用紫外光解焦化技術圖案化之鋯鈦酸鉛薄膜具理想的幾何結構形狀。

The patterning technique of PZT thin film is an essential process in device fabrication processes for application in microsensors and microactuators. Chemical etching and physical etching processes are two of the most commonly used techniques to pattern PZT thin film. However ,the difference in etching yields of Pb ,Zr, and Ti leads to undesired residues on PZT films in chemical etching process. The poor selectivity of PZT over photoresist mask and platinum electrodes causes unsatisfactory PZT pattern. This thesis developed a PZT pattern technique by photolysis processes PZT thin films were first spin coated on the substrate and exposed by UV light for photolysis step. The UV photolysis step defined exposed and unexposed area by mask ,and the pattern will be transferred to PZT thin film. After photolysis, PZT films were placed in non-ionic surfactant to remove unexposed area. Finally, PZT films were sintered at 650℃ in the furnace for crystallization.
Experimental results showed that remnant polarization of PZT film by UV photolysis was 21.4(μc/cm2),which was compared to 17.24(μc/cm2) by hot plate prolysis. Coercive fields were 45 and 104 kV/cm by UV photolysis and hot plate prolysis, respectively. Dielectric loss was 0.027 by UV photolysis which was much smaller than 0.043 by hot plate prolysis. PZT thin films patterned by UV photolysis showed satisfactory geometries.
其他識別: U0005-1808201122101700
Appears in Collections:機械工程學系所

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