Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/1655
標題: 表面張力及重力對光阻熱熔成型形貌影響之探討
An Investigation on The Effect of Surface Tension and Gravity on The Profile of Photoresist in Reflow Process
作者: 許泳順
Hsu, Yung-Shun
關鍵字: Reflow;熱熔法;Photoresist;Drop;Profile;Surface Tension;Gravity;光阻;液滴;形貌;表面張力;重力
出版社: 機械工程學系所
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摘要: 
光阻已廣泛應用於不同尺度圖案的成型,利用熱熔法成型光阻時,光阻之形貌會因表面張力與重力作用而有所差異,對其後續之應用有甚大影響。本研究主要目的在於探討不同的表面張力與重力作用程度,對於光阻熱熔形貌之影響。研究首先以表面張力及重力與液滴形貌之理論為基礎,藉由數值模擬分析液滴尺度改變時,因表面張力與重力交互作用程度不同對於液滴形貌產生之影響,分析顯示光阻成型時,液滴形貌之高徑比僅在重力與表面張力之比值Bond number (Bo)大於臨界值時才受到影響,在此情況下隨著Bo的提高,液滴高徑比亦隨之承指數急速下降。理論推算AZ4620光阻經熱熔成型時其曲率半徑R之臨界值約為2500μm,當曲率半徑R為2500μm以下(Bo<1),則光阻熱熔成型之形貌受表面張力影響較大,而重力影響較小;反之,則形貌受重力影響將較顯著,而表面張力影響較小。研究並透過液滴形貌觀測與光阻熱熔實驗驗證此分析模式,實驗結果顯示,隨著光阻尺寸的增加,Bo由0.005增加至0.192,而光阻形貌之高徑比則由0.095降低至0.065,將實驗結果與理論分析結果比較,兩者具有相同之趨勢,驗證該理論分析之合理性,雖然二者之差異仍待進一步探討,唯上述之臨界值可作為光阻熱熔成型元件設計與製程參考之依據。

Photoresist has been widely used for forming patterns in different scales. When it solidifies from melting condition, for example by the reflow process, its profile deforms due to surface tension and gravity. This research is aimed to investigate the influence of surface tension and gravity on the profile of photoresist in thermal reflow process. Theoretical analysis based on the interaction between surface tension and gravity of liquid droplet is first investigated. The result showed that the height to diameter ratio (h/D), or the sag ratio, of the liquid droplet is affected by the Bond number (Bo), a number defined as the ratio of gravity to surface tension. The sag ratio is not affected at small Bo but it decreases as Bo increases if Bo is over the critical number. Based on the analysis, the critical number for the AZ4620 photoresist on a silicon substrate is 1, corresponding to the critical radius of droplet R=2500μm. When the size of the droplet is less then the critical size, the profile is mainly controlled by the surface tension and thus the sag ratio is about the same regardless the size. The profile, in contrast, is highly affected by the gravity if the size of the droplet is larger then the critical size. The sag ratio decreases exponentially with respect to Bo in this case. Experiments are also designed and conducted to verify the analysis. Experimental result showed that the sag ratio of the photoresist reduces to 0.065 from 0.095 when Bo increases from 0.005 to 0.192. The results showed that the trend is consistent to the theoretical model. Although the difference between experimental results and theoretical analysis needs further investigation, the critical size based on the analysis provides a reasonable base for photoresist forming.
URI: http://hdl.handle.net/11455/1655
其他識別: U0005-2007200617451600
Appears in Collections:機械工程學系所

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