Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/1665
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dc.contributor施錫富zh_TW
dc.contributor李吉群zh_TW
dc.contributor蔡東憲zh_TW
dc.contributor許世卿zh_TW
dc.contributor.advisor黃敏睿zh_TW
dc.contributor.author鍾定祺zh_TW
dc.contributor.authorChung, Ting-Chuen_US
dc.contributor.other中興大學zh_TW
dc.date2007zh_TW
dc.date.accessioned2014-06-05T11:41:22Z-
dc.date.available2014-06-05T11:41:22Z-
dc.identifierU0005-2208200602165400zh_TW
dc.identifier.citation1.Tai-Ran Hsu,“MEMS & Microsystems Design and Manufacture”, McGraw-Hill, 2002, p313-315. 2.林秀珊,“溶膠凝膠法製備ITO透明導電膜及性質之研究”,國立 清華大學材料科學與工程研究所碩士論文,1999年。 3.許正治,“退火對ITO薄膜特性之影響”,國立台北科技大學材料 及資源工程系碩士論文,2001年。 4.溫志中,“ITO透明導電膜之濺鍍技術展望”,工業材料166期, 2000年10月,140-148頁。 5.陳柏菁,“應用於平面顯示器之ITO透明電極”, 光訊第85期, 2000年8月,27-30頁。 6.陳適範,汪正時,王韋欽,許正治,“透明導電膜經退火處理 之光電特性分析”,中國材料科學1999年會會刊,1999年。 7.汪正時,“彩色液晶顯示器之透明電極製作技術”, 國立台北科 技大學材料及資源工程系碩士論文,2000年。 8.李正中,“薄膜光學與鍍膜技術”,藝軒圖書出版社,2002年6 月,2-5頁。 9.呂登復,“實用真空技術”,國興出版黎明經銷,2002年3月, 3-32頁。 10.陳寶清,“真空表面處理工學”,表面工業雜誌社編輯,傳勝出 版社,1992年2月。 11.J.R. Roth,“Industril Plasma Engineering-Volume”, Institute of Physics Publishing London, 1995. 12.陳建仁等箸,“真空技術與應用”,行政院國家科學委員會精密 儀器發展中心,2001年,379-387頁。 13.Alfred Grill,“Cold Plasma in Material Fabrication”, The Institute of Electrical and Electronics Engineers, Inc. New York, 1994, p24-27. 14.D.S. Richerby and A. Matthews,“Advanced Surface Coatings”, A Handbook of Surface Engineering, Chapman and Hall, New York,1991, p92-100. 15.黃上昀,“反應性磁控濺鍍法製備ITO薄膜應用於ARAS膜之研 究”,國立台北科技大學材料及資源工程系碩士論文,2002年。 16.張益新,“銅製程矽晶片上ZnO薄膜合成之研究”, 國立成功大 學材料科學及工程學系碩士論文,1999年。 17.莊達人,“VLSI製造技術”,高立圖書有限公司,2004年6月, 150頁,352頁。 18.楊哲勛,“射頻磁控濺鍍氧化鎳製程條件對顯微結構與電性及 光性之研究”,國立成功大學材料科學及工程學系碩士論文, 2001年。 19.Le Paven-Thivet, C. Malibert, Ph. Houdy, P.A. Albouy, “ RF-Sputtering deposition of Al/Al2O3 multilayers”, Thin Solid Films 336,1998, p373-376. 20.M. Ohring,“The Materials Science of Thin Films”, Academic Press, New Jersey, 1992, p197, p224. 21.D.M. Mattox, J. Vac. Sci. Technol. A7 (3), 1989, p1105. 22.白蓉生,“細密線路蝕刻與濕膜光阻”, 尋智PCB專業雜誌網。 23.汪建民主編,“材料分析”,中國材料科學學會,1998年10月, 122頁。 24.Kentaro Utsumi, Osamu Matsunaga, Tsutomu Takahata, “Low resistivity ITO film prepared using the ultra high density ITO target”, Thin Solid Film, 1998, p30-34. 25.L.J. Meng and M.P.D. Santos,“Properties of Indium Tin Oxide (ITO) Films Prepared by R.F. Reactive Magnetron Sputtering at Different Pressures ”, Thin solid films, 1997, p151. 26.S. Bhagwat, R.P. Howson,“Use of the magnetron- sputtering technique for the control of the properties of indium tin oxide thin films” Surface and Coatings Technology, 1999, p163-171. 27.李秀春,“溶凝膠靶材製備條件對RF磁控濺鍍法鍍製ITO薄膜性 質影響探討”,長庚大學化工及材料工程學研究所碩士論文, 2000年。zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/1665-
dc.description.abstract銦錫氧化物薄膜因具有高穿透率及低電阻率的特性,目前在LCD顯示器的透明導電電極應用上,仍是最廣泛被使用的材料。 本實驗主要是利用磁控濺鍍系統,沉積銦錫氧化物薄膜於玻璃基板上,探討在改變濺鍍製程壓力、功率、氧氣流量等條件下,對銦錫氧化物薄膜各項特性的影響。實驗以分光光譜儀做薄膜穿透率量測,以四點探針量測片電阻,以TENCOR量測膜厚及利用蝕刻方式分析各條件對薄膜蝕刻速率的影響。 經由實驗我們得到,當改變濺鍍製程壓力由2 mtorr變化至6 mtorr時,薄膜表面晶粒組織,由大而明顯轉趨於細密;沉積速率呈下降趨勢,而在5 mtorr時有較好的電阻率及較低的蝕刻速率。在濺鍍功率的變化方面,以不同的濺鍍功率沉積相同膜厚的條件下,表面晶粒大小的變化不明顯,穿透率僅在短波長區以高功率的條件為較優,而在4 kw時有較好的電阻率,及較低的蝕刻速率。另外在改變濺鍍時的氧通量由5.5 sccm上升至16.5 sccm時,表面晶粒大小由細密變為粗大,穿透率值部份則為上升趨勢,同時氧通量在5.5 sccm時有最好的電阻率及較低的蝕刻速率。zh_TW
dc.description.abstractThe ITO thin films have properties of high transparency and low resistivity; therefore still have been applications of extensively on LCD pattern. In this thesis research, the ITO films were deposited on substrates by DC magnetron sputtering system. The effects of sputtering conditions such as process pressure, DC power, and oxygen flow had been studied. Films particular transparency was measured by spectrophotometer; the sheet resistance was detected by four-probe meter; the films thickness was measured by a TENCOR profile meter, and processes of etching were used to analyze etching rate. The results reveal that when sputtering process pressure from 2 mtorr to 6 mtorr, the surface grain size of films is from large change to small, deposition rate tends to lower, and in pressure of 5 mtorr have highest resistivity and lowest etching rate. Change sputter power, to get the films of same thickness, the results that surface grain size is tends to invisible. When short wave measure of spectrophotometer, have been good transparency tends to high power, and in power of 4 kw have highest resistivity and lowest etching rate. When the oxygen flow of sputtering process, from 5.5 sccm to 16.5 sccm, the surface grain size of films is from small change to large; the measure of spectrophotometer, have been good transparency tends to high oxygen flow, and in oxygen flow of 5 sccm have highest resistivity and lowest etching rate.en_US
dc.description.tableofcontents第一章 緒論……………………………………………………………1 1.1 前言………………………………………………………………1 1.2 研究目的…………………………………………………………1 第二章 理論基礎………………………………………………………3 2.1 銦錫氧化物薄膜簡介……………………………………………3 2.1.1 ITO薄膜之發展 ……………………………………………3 2.1.2 銦錫氧化物之結構簡介……………………………………3 2.1.3 銦錫氧化物之光學特性……………………………………4 2.1.4 銦錫氧化物之導電性質……………………………………5 2.2 真空技術…………………………………………………………5 2.2.1 真空定義……………………………………………………5 2.2.2 真空範圍定義………………………………………………5 2.2.3 真空的獲得…………………………………………………7 2.3 濺鍍原理概述……………………………………………………7 2.3.1 電漿…………………………………………………………7 2.3.2 濺鍍理論……………………………………………………9 2.3.3 直流濺鍍系統………………………………………………11 2.3.4 磁控濺鍍系統………………………………………………12 2.4 薄膜沉積原理……………………………………………………12 2.4.1 薄膜沉積過程………………………………………………12 2.4.2 薄膜微觀結構………………………………………………13 2.5 蝕刻技術…………………………………………………………14 2.5.1 濕蝕刻(wet etching) ……………………………………15 第三章 實驗方法與步驟………………………………………………23 3.1 實驗材料…………………………………………………………23 3.2 實驗設備…………………………………………………………23 3.3 實驗方法…………………………………………………………24 3.4 薄膜的分析與測試………………………………………………26 第四章 結果與討論……………………………………………………32 4.1 製程壓力變化之影響……………………………………………32 4.2 濺鍍功率變化之影響……………………………………………34 4.3 氧氣流量變化之影響……………………………………………36 第五章 結論……………………………………………………………67 參考資料 ………………………………………………………………69zh_TW
dc.language.isoen_USzh_TW
dc.publisher機械工程學系所zh_TW
dc.relation.urihttp://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-2208200602165400en_US
dc.subjectsputteringen_US
dc.subject濺鍍zh_TW
dc.subjectITOen_US
dc.subject氧化銦錫zh_TW
dc.title磁控濺鍍銦錫氧化物薄膜製程條件對薄膜特性及蝕刻性影響之研究zh_TW
dc.titleThe Study of ITO Thin Film and Etching Characterization by Magnetron Sputteringen_US
dc.typeThesis and Dissertationzh_TW
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.openairetypeThesis and Dissertation-
item.cerifentitytypePublications-
item.fulltextno fulltext-
item.languageiso639-1en_US-
item.grantfulltextnone-
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