Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/1673
標題: 低驅動電壓之微機電射頻開關
Low Driving Voltage RF MEMS Switch
作者: 陳俊翰
Chen, Jing-Han
關鍵字: MEMS;微機電;RF switches;CPW;actuator;CMOS;post-process;射頻開關;共平面波導;致動器;互補式金氧半導體;後製程
出版社: 機械工程學系所
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摘要: 
本研究利用標準0.35μm 2P4M (double polysilicon four metal) CMOS (complementary metal oxide semiconductor)製程來製作低驅動電壓之微機電射頻開關,開關是以電容耦合(capacitive coupling)的方式進行運作,是一種以靜電力為驅動的開關,開關的結構包含了共平面波導(coplanar waveguide)的傳輸線和一個架構於其上的薄膜,共平面波導與薄膜是利用CMOS製程裡的金屬層製作,後製程蝕刻氧化矽層,然後將薄膜懸浮。在設計上改變結構的彈簧係數降低開關的驅動電壓,並探討開關的切換速度及操作壽命。達成開關所需的最小吸附電壓(pull-in voltage)為8伏特,在頻率40GHz時插入損失為-3.2dB;當開關被施以驅動電壓後,隔絕度為-14.5dB;而微機電射頻開關的切換速度為4.44μs,操作壽命的作動次數超過3百萬次。

This work investigates the fabrication of RF (ratio frequency) MEMS (Micro electro mechanical system) switches using the standard 0.35μm 2P4M (double polysilicon four metal) CMOS (complementary metal oxide semiconductor) process and the post-process. The switches are a capacitive type, which are actuated by an electrostatic force. The structure of the switches consists of a CPW (coplanar waveguide) transmission lines and a suspended membrane. The CPW lines and the membrane are the metal layers of the CMOS process. The post-process uses an etchant to etch oxide layer to release the suspended membrane. The low spring constant is adopted to reduce the driving voltage of the switches. The switching time and the switch lifetime are also studied. Achieved lowest pull-in voltage of the switches is 8V. The insertion loss and isolation at 40GHz are -3.2 dB and -14.5dB, respectively. The measured switching time is 4.44μs. The switches have demonstrated lifetimes more than 3000000 switching cycles.
URI: http://hdl.handle.net/11455/1673
其他識別: U0005-2305200614103100
Appears in Collections:機械工程學系所

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