Please use this identifier to cite or link to this item:
標題: Investigation on the structural properties of CuInxGa1-xSe2 films using transmission electron microscopy
作者: 楊培青
Yang, Pei-Ching
關鍵字: CuInGaSe;銅銦鎵硒;selenization;transmission electron microscopy;硒化;穿透式電子顯微術
出版社: 物理學系所
引用: [1] D. L. Staebler and C. R. Wronski , Appl. Phys. Lett. 31, 292-294(1977). [2] I.H. Choi, D.H. Lee, Thin Solid Films 515,4778–4782 (2007). [3] Doo Youl Lee, Byung Tae Ahn, Kyung Hoon Yoon, Jin Soo Song, Solar Energy Materials & Solar Cells 75,73–79 (2003). [4] Wei Li, Yun Sun, Wei Liu, Lin Zhou, Solar Energy 80, 191–195(2006). [5] Richard H. Bube, Photovoltaic Materials, p192. [6] Sutichai CHAISITSAK, Akira YAMADA , Makoto KONAGAI, Jpn. J. Appl. Phys. Vol. 41 , 507–513(2002). [7] S. Zweigart , D. Schmid, J. Kessler, H. Dittrich and H. W. Schock, J. Cryst. Growth 146, 233-238 (1995). [8] Y. Ogawa, A. Jager-Waldau, T.H. Hua, Y. Hashimoto, K. Ito, Applied Surface Science 92, 232-236 (1996). [9] V. Alberts, J. H. Schon and E. Bucher, J. Appl. Phys. 84, 6881-6885 (1998). [10] F. Hergert , R. Hock , A. Weber , M. Purwins , J. Palm , V. Probst , Journal of Physics and Chemistry of Solids 66 , 1903–1907 (2005). [11] Fangdan Jiang, Jiayou Feng, Thin Solid Films 515 (2006) 1950–1955. [12] SeJin Ahn, Chae Woong Kim, JaeHo Yun, Jeong Chul Lee, Kyung Hoon Yoon, Solar Energy Materials & Solar Cells 91, 1836–1841 (2007). [13] M. Marudachalam, H. Hichri, R.W. Birkmire, J.M. , A. B. Swartzlander, and M. M. Al-Jassim , 25th PVSC, May 13-17, 1996 , pp.805-807. [14] C. Lei, A. Rockett , I. M. Robertson, W. N. Shafarman and M. Beck , J. Appl. Phys. 100,073518 2006. [15] 陳力俊等著, “材料電子顯微鏡學” ,國科會精密儀器發展中心。 [16] Yanfa Yan,K.M.Jones,R.Noufi and M.M. Al-Jassim, Thin Solid Films 515.2007.pp.4681-4685. [17] 蕭聖右著, “採用二丁基硒硒化製備之銅銦鎵硒薄膜物理特性之研 究”, 國立中興大學 (2010)。 [18] Setagaya-ku, American Institute of Physics. S0003-6951(99)00617-8, 1999.
本論文主要以穿透式電子顯微鏡(Transmission Electron Microscopy;TEM)分析銅銦鎵硒CuInxGa1-xSe2;CIGS薄膜之微結構特性並補以x光繞射XRD分析印證TEM分析之結果。CIGS薄膜之製備採用二丁基硒(DTBSe)硒化濺鍍於鈉鈣玻璃(SLG)之銅/銦/鎵金屬薄膜。TEM分析結果顯示多階段溫度硒化製成所製備之CIGS薄膜具備較佳之結晶特性,和XRD分析之結果一致。

In this thesis , transmission electron microscopy (TEM) along with x-ray diffraction (XRD) were conducted to evaluate the structural characteristics of copper indium gallium di-selenide (CuInxGa1-xSe2;CIGS) films. The CIGS films were prepared by selenization of sputtered Cu/In/Ga films on sodium lime glass (SLG) films using ditert-butylselenide (DTBSe) .
TEM observation of CIGS films shows that improved crystalline quality is achieved for CIGS films selenized by multi-stage selenization process. The result is consistent with that detected by XRD measurements .
其他識別: U0005-2806201117195200
Appears in Collections:物理學系所

Show full item record

Google ScholarTM


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.