Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/17085
標題: 鉑原子在Si(111)-7x7表面的動態行為研究
Dynamical Investigation of Platinum Atoms on Si(111)-7x7 surface
作者: 杜訓達
Tu, Hsun-Ta
關鍵字: platinum;鉑;STM;island;STM;島狀結構
出版社: 物理學系所
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摘要: 
The adsorption and the dynamics of platinum atoms on the Si(111)-7x7 surface were studied by using a ultra high vacuum scanning tunneling microscope .It covered high coverage and low coverage experiments .
In low coverage experiment ,it covered room temperature and high temperature experiments . We conferred the adsorption site of single platinum atom and inferred the hopping path of single platinum atom by using profile to analyze in room temperature experiment. We took down the time of single platinum stay in half unit cells to get the activation energy and pre-ponential factor for the platinum atoms crossing the cell boundary by Arrhenius plot.
The activation energy are Ea(F→U)= 0.77±0.09eV and
Ea(U→F)= 0.62±0.04eV,respectively. The pre-ponential factor are
Ro(F→U)=109.85±2.73Hz and Ro(U→F)=108.77±0.54Hz,respectively. When the temperature increase to 350K,platinum atoms and silicon surface found to form a new adsorption site. When the temperature up to 360K,single platinum atom hopping could not be found any more and only the new adoption site.
In high coverage experiment, we found the island structure of platinum atoms and silicon atoms. The structure were Pt silicide island(6.28x6.28).

本文將利用超高真空掃描穿隧顯微鏡(Scanning Tunneling Microscope,STM)研究鉑原子吸附於Si(111)-7x7重構表面上的各種行為。實驗內容包含了高蒸鍍量實驗與低蒸鍍量實驗。
低蒸鍍量實驗的部分,以實驗環境溫度的不同分為室溫實驗與高溫實驗。在室溫實驗部分,探討了鉑原子在室溫下的吸附狀態,並藉由鉑原子吸附於各半晶胞的縱向高度分析圖,推論鉑原子於半晶胞內的跳躍路徑;而在高溫實驗部分,則藉由觀測不同環境溫度下鉑原子停留在各半晶胞的時間,再利用Arrhenius equation求得單一鉑原子跨越晶胞邊界所需之活化能(activation energy)及前置跳躍因子(pre-exponential factor),所得到的活化能分別為Ea(F→U)= 0.77±0.09eV及Ea(U→F)= 0.62±0.04eV;前置跳躍因子分別為Ro(F→U)=109.85±2.73Hz及Ro(U→F)=108.77±0.54Hz。在樣品達到350K左右時,鉑原子與矽基底形成穩定的鉑矽化合物,且在溫度360K以上時,不再觀察的到單一鉑原子的跳躍,而是僅存在鉑矽化合物。
於高蒸鍍量實驗部分,蒸鍍上大量的鉑原子,並經過熱處理後,發現鉑原子與矽原子的島狀結構(island),並在附近發現一凹陷的結構,經幾何分析與數據統計,得知其為Pt silicide island(6.28x6.28)的結構。
URI: http://hdl.handle.net/11455/17085
其他識別: U0005-1202200914410400
Appears in Collections:物理學系所

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