Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/17169
標題: Growth and characterization of In-doped ZnO films on (11-20) sapphire substrates using atomic layer deposition
以原子層沉積法生長銦摻雜氧化鋅膜於(11-20)面氧化鋁基板之特性研究
作者: 蕭琦穎
Chi-Ying, Hsiao
關鍵字: atomic layer deposition(ALD);銦摻雜氧化鋅;transparent conductive oxide (TCO);原子層沉積法;透明導電氧化膜
出版社: 物理學系所
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摘要: 
本研究採用原子層沉積法成長氧化鋅摻雜銦薄膜於(11-20)面氧化鋁基板上。實驗以二乙基鋅(DEZn)、三甲基銦(TMIn)與高純度氧化亞氮(N2O)做為II、III 與VI 族的前驅氣體,使用高度純化之氮氣當作輸送氣體。藉由固定η = TMIn/(DEZn+TMIn) 氣相比,改變TMIn進入腔體次數及改變η 氣相比等實驗參數,來獲得低電阻高穿透性的銦摻雜氧化鋅薄膜。銦摻雜氧化鋅薄膜之光電物理特性與成分組成百分比分別使用光學穿透量測儀、霍爾量測、X-光繞射、掃描式電子顯微鏡與X 射線光電子能譜儀來鑑定。研究結果顯示銦摻雜有助於提高氧化鋅薄膜的光學及電學特性,於特定製程條件下,可以獲得穿透率高達90%以上及電阻率可以低到8.7x10-4Ω-cm 的銦摻雜氧化鋅薄膜。

Indium-doped zinc oxide (IZO) films were deposited on (11-20) sapphire substrates at 300°C by atomic layer deposition (ALD) using diethyl-zinc (DEZn),trimethyl-indium (TMIn) and nitrous oxide (N2O). The optical, structural and conductive properties of the ALD-grown IZO films were characterized by optical transmission spectroscopy, x-ray diffractometry (XRD), field-emission scanning electron microscopy (FESEM), and Hall measurements. The atomic percentages and chemical states of ALD-grown IZO films were also analyzed by x-ray photoelectron spectroscopy (XPS). It was found that In-doping tended to enhance conductivity and transmittance of the IZO film. Under certain conditions, ALD-grown IZO films exhibit more than 90% optical transmittance in the visible spectra with resistivities being in the range of high 10^-4 Ω-cm.
URI: http://hdl.handle.net/11455/17169
其他識別: U0005-2104201000570600
Appears in Collections:物理學系所

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