Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/17195
標題: Characteristics of Al-doped ZnO films grown on (11-20) sapphire substrates using atomic layer deposition
生長於(11-20)面氧化鋁基板之原子層沉積鋁摻雜氧化鋅膜特性之研究
作者: 楊竣雄
Yang, Jyun-Syong
關鍵字: ZnO;氧化鋅;atomic layer deposition;原子層沉積
出版社: 物理學系所
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摘要: 
本研究採用原子層沉積法成長鋁摻雜氧化鋅薄膜於(11-20)面氧化鋁基板上。實驗以二乙基鋅(DEZn)、三甲基鋁(TMAl)與高純度氧化亞氮(N2O)做為II、III與VI族的前驅氣體,使用高度純化之氮氣當作載流氣體。藉由改變三甲基鋁通入腔體的次數及總莫耳數實驗參數來生長鋁摻雜氧化鋅薄膜。鋁摻雜氧化鋅薄膜之光電物理特性分別使用光學穿透量測儀、霍爾量測、X-光繞射與場發射掃描式電子顯微鏡來鑑定。研究結果顯示於特定製程條件下鋁摻雜有助於提高鋁摻雜氧化鋅薄膜的光學及電學特性。

Aluminum-doped zinc oxide (AZO) films were deposited on (11-20) sapphire substrates at 300C by atomic layer deposition (ALD) using diethyl-zinc (DEZn),trimethyl-aluminum (TMAl) and nitrous oxide (N2O). The optical, structural and conductive properties of the ALD-grown AZO films were characterized by optical transmission spectroscopy, x-ray diffractometry (XRD), field-emission scanning electron microscopy (FESEM), and Hall measurements. Under certain conditions, Al-doping tended to enhance conductivity and transmittance of the AZO film.
URI: http://hdl.handle.net/11455/17195
其他識別: U0005-3006201015372100
Appears in Collections:物理學系所

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