Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/17195
DC FieldValueLanguage
dc.contributor許薰丰zh_TW
dc.contributorH.F. Hsuen_US
dc.contributor林泰源zh_TW
dc.contributor林得裕zh_TW
dc.contributorT.Y. Linen_US
dc.contributorD.Y. Linen_US
dc.contributor.advisor龔志榮zh_TW
dc.contributor.advisorJ.R. Gongen_US
dc.contributor.author楊竣雄zh_TW
dc.contributor.authorYang, Jyun-Syongen_US
dc.contributor.other中興大學zh_TW
dc.date2011zh_TW
dc.date.accessioned2014-06-06T06:58:15Z-
dc.date.available2014-06-06T06:58:15Z-
dc.identifierU0005-3006201015372100zh_TW
dc.identifier.citation[1] Jinsu Yoo, Jeonghul Lee, Seokki Kim, Kyunghoon Yoon, I. Jun Park, S.K. Dhungel, B. Karunagaran, D. Mangalaraj, Junsin Yi, Thin Solid Films 480, 213 (2005) [2] T.W. Kim, D.C. Choo, Y.S. No, W.K. Choi, E.H. Choi, Applied Surface Science 253, 1917 (2006) [3] Byeong-Yun Oh, Min-Chang Jeong, Tae-Hyoung Moon, Woong Lee, and Jae-Min Myoung, JOURNAL OF APPLIED PHYSICS 99, 124505 (2006) [4] C.G. Granqvist, A. Hulta˚ker, Thin Solid Films 411, 1(2002) [5] 陳建華,”p 型透明導電膜應用於有機發光二極體”, 國立立成功 大學化學工程研究所 碩士論文, 2003 [6] K. Badeker, Ann. Phys. (Leipzig), 22, 749(1907). [7] “ Zinc Oxide Bulk, Thin Films and Nanostructures : Processing, Properties and Applications ”, edited by Chennupati Jagadish and Stephen J. Pearton (2006) [8] J. Chen and T. Fujita, Jpn. J. Appl. Phys. 42, 602 (2003) [9] I. Volintiru, M. Creatore, and B. J. Kniknie, JOURNAL OF APPLIED PHYSICS 102, 043709 (2007) [10] J. Mass, P. Bhattacharya, R.S. Katiyar, Materials Science and Engineering B103, 9 (2003) [11] Takeshi Ohgaki, Yuji Kawamura, Takashi Kuroda, Naoki Ohashi, Yutaka Adachi, Takaaki Tsurumi, Fujio Minami, Hajime Haneda, Key Engineering Materials 248, 91 (2003) [12] W.W. Wang, X.G. Diao, Z. Wang, M. Yang, T.M. Wang, Z. Wu, Thin Solid Films 491 54 (2005) [13] T. Koyama and S. F. Chichibu, J. Appl. Phys. 95 7856 (2004). [14] “Atomic Layer Epitaxy”, edited by T. Suntola and M. Simposn, (1990) [15] T. Koyama and S. F. Chichibu, J. Appl. Phys. 95 7856 (2004). [16] Y. W. Heo, K. Ip, S. J. Pearton, D. P. Norton and J. D. Budai, Appl. Surface Sci. 252, 7442 (2006). [17] D. Li, Y. H. Leung, A. B. Djurisic, Z. T. Liu, M. H. Xie, S. L. Shi and S.J. Xu, Appl. Phys. Lett. 85, 1601 (2004). [18] E. G. Bylander, J. Appl. Phys. 49, 1188 (1978) [19] K. Vanheusden, C. H. Seager, W. L. Warren, D. R. Tallant and J. A. Voiget, Appl. Phys. Lett. 68, 403 (1996) [20] B. Lin and Z. Fu, Appl. Phys. Lett. 79, 943 (2001) [21] D. A. Neamen, “SEMICONDUCTOR PHYSICS AND DEVICES: Basic Principles”, 2nd ed., McGraw-Hill Companies, USA, 1997 [22] Chaehwan JEONG, Ho-Sung KIM, Duck-Rye CHANG, and Koichi KAMISAKO, Japanese Journal of Applied Physics 47, 5656 (2008) [23] Jiaheng Wang, LeiMeng, YangQi, MaolinLi, GuimeiShi, MeilinLiu, Journal of Crystal Growth 311, 2305(2009) [24] T.Tsurumi, S. Nishizawa, N.Ohashi and T. Ohgaki,Jpn. J. Appl. Phys.38,3682(1999) [25] Kun Ho Kim, Ki Cheol Park and Dae Young Ma, J. Appl. Phys. 81, 7764 (1997) [26] J. G. Lu, S. Fujita, T. Kawaharamura, H. Nishinaka, Y. Kamada, T. Ohshima, Z. Z. Ye, Y. J. Zeng, Y. Z. Zhang, L. P. Zhu, H. P. He, and B. H. Zhao, JOURNAL OF APPLIED PHYSICS 101, 083705 (2007) [27] R.K. Shukla, Anchal Srivastava, Atul Srivastava, K.C. Dubey, Journal of Crystal Growth 294, 427 (2006) [28] Jiaheng Wang, LeiMeng, YangQi, MaolinLi, GuimeiShi, MeilinLiu, Journal of Crystal Growth 311, 2305 (2009) [29] R. GROENEN, E.R. KIEFT, J.L. LINDEN and M.C.M. VAN DE SANDEN, Journal of ELECTRONIC MATERIALS, 35, 711 (2006) [30] 許樹恩等著, “X光繞射原理與材料結構分析” ,中國材料科學學 會 [31] B. E. Sernelius, K.F. Berggren, Z.C. Jin, I. Hamberg and C.G. Granqvist, The American Physical Society 37, 10 244 (1988) [32] H.W. Lee, S.P. Lau, Y.G. Wang, K.Y. Tse, H.H. Hng, B.K. Tay, Journal of Crystal Growth 268, 596(2004)zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/17195-
dc.description.abstract本研究採用原子層沉積法成長鋁摻雜氧化鋅薄膜於(11-20)面氧化鋁基板上。實驗以二乙基鋅(DEZn)、三甲基鋁(TMAl)與高純度氧化亞氮(N2O)做為II、III與VI族的前驅氣體,使用高度純化之氮氣當作載流氣體。藉由改變三甲基鋁通入腔體的次數及總莫耳數實驗參數來生長鋁摻雜氧化鋅薄膜。鋁摻雜氧化鋅薄膜之光電物理特性分別使用光學穿透量測儀、霍爾量測、X-光繞射與場發射掃描式電子顯微鏡來鑑定。研究結果顯示於特定製程條件下鋁摻雜有助於提高鋁摻雜氧化鋅薄膜的光學及電學特性。zh_TW
dc.description.abstractAluminum-doped zinc oxide (AZO) films were deposited on (11-20) sapphire substrates at 300C by atomic layer deposition (ALD) using diethyl-zinc (DEZn),trimethyl-aluminum (TMAl) and nitrous oxide (N2O). The optical, structural and conductive properties of the ALD-grown AZO films were characterized by optical transmission spectroscopy, x-ray diffractometry (XRD), field-emission scanning electron microscopy (FESEM), and Hall measurements. Under certain conditions, Al-doping tended to enhance conductivity and transmittance of the AZO film.en_US
dc.description.tableofcontents目錄 誌謝辭…………………………………………………………………..i 中文摘要…………………………………………………………………ii 英文摘要………………………………………………………………..iii 目錄……………………………………………………………………..iv 表目次…………………………………………………………………..vii 圖目次…………………………………………………………………..viii 第一章 緒論……………………………………………………………1 第二章 研究動機與背景………………………………………………3 § 2-1研究動機與透明導電膜背景介紹…………………………..3 § 2-2原子層沉積的基本原理與成長機制……………………..8 § 2-3 (0001)面氧化鋅薄膜與(11-20)氧化鋁基板之晶格錯配 (lattice mismatch) ……………………………………..12 § 2-4 薄膜內部點缺陷(point defects)的形成及它們的影響 ……………………………………………………………………..15 2-4-1 薄膜內點缺陷的形成…………………………….15 2-4-2 氧化鋅內部之點缺陷種類……………………….15 2-4-3 點缺陷對氧化鋅薄膜及元件特性的影響……….16 第三章 實驗步驟……………………………………………………….21 § 3-1氧化鋁基板之清洗………………………………………..21 § 3-2低溫鋁摻雜氧化鋅薄膜之生長…………………………..23 § 3-3 改變r值條件下生長鋁摻雜氧化鋅薄膜(三甲基鋁流量固 定為8.13μmole/min) …………………………………..27 § 3-4改變r值條件下生長鋁摻雜氧化鋅薄膜(三甲基鋁總莫耳 數固定為97.56μmole)………………………………….29 § 3-5 不同三甲基鋁流量條件下生長鋁摻雜氧化鋅薄膜(r值固 定為1/25)………………………………………………..31 § 3-6 鋁摻雜氧化鋅薄膜物理特性之分析…………………….33 3-6-1 X-光繞射分析………………………………………33 3-6-2場發射掃描式電子顯微鏡分析…………………….37 3-6-3霍爾效應分析……………………………………….38 3-6-4穿透光譜量測分析………………………………….41 第四章 實驗結果與討論……………………………………………….42 § 4-1 改變r值對所生長之鋁摻雜氧化鋅薄膜物理特性之影響 (三甲基鋁流量固定為8.13μmole/min) ……………….42 § 4-2 改變r值對所生長之鋁摻雜氧化鋅薄膜物理特性之影響 (三甲基鋁總莫耳數固定為97.56μmole)……………..49 § 4-3 三甲基鋁流量對所生長之鋁摻雜氧化鋅薄膜物理特性之影響(r值固定為1/25)………………………………….58 第五章 結論……………………………………………………………65 第六章 未來研究方向…………………………………………………66 參考文獻…………………………………………………………………67zh_TW
dc.language.isoen_USzh_TW
dc.publisher物理學系所zh_TW
dc.relation.urihttp://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-3006201015372100en_US
dc.subjectZnOen_US
dc.subject氧化鋅zh_TW
dc.subjectatomic layer depositionen_US
dc.subject原子層沉積zh_TW
dc.titleCharacteristics of Al-doped ZnO films grown on (11-20) sapphire substrates using atomic layer depositionen_US
dc.title生長於(11-20)面氧化鋁基板之原子層沉積鋁摻雜氧化鋅膜特性之研究zh_TW
dc.typeThesis and Dissertationzh_TW
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.languageiso639-1en_US-
item.grantfulltextnone-
item.cerifentitytypePublications-
item.openairetypeThesis and Dissertation-
item.fulltextno fulltext-
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