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標題: 三元金屬硫族AgSbS2半導體敏化太陽能電池
Ternary metal chalcogenide AgSbS2 semiconductor sensitized solar cells
作者: 何宜融
Ho, Yi-Rong
關鍵字: 量子點;quantum dots;染料敏化太陽能電池;dye-sensitized solar cells
出版社: 物理學系所
引用: 參考文獻 1. M. Gratzel, Nature 414, 338−344 (2001) 2. H. Spanggaard, F. C. Krebs, Solar Energy Materials & Solar Cells,83,125-146(2004) 3. Y. Luo, D. Li and Qi. Meng, Adv. Mater, 21,4647-4651 (2009) 4. 陳佳靜, 國立中興大學物理所碩士論文(2008) 5. 林義成, 國立彰化師範大學機電系/顯示所(2005) 6. Y. L. Lee, Y. S. Lo, Adv. Funct. Mater. 19, 604–609 (2009) 7. X. F. Gao, H. B. Li, W. T. Sun, Q. Chen, F. Q. Tang and L. M. Peng, J. Phys. Chem. C 113,7531-7535 (2009) 8. 李德龍, 國立中興大學物理所碩士論文(2007) 9. S. H. Choi, H. Song, I. K. Park, J. H. Yum, S. S. Kim, S. Lee, Y. E. Sung, Journal of Photochemistry and Photobiology A: Chemistry 179, 135–141 (2006) 10. P. Wang, S. M. Zakeeruddin, P. Comte, R. Charvet, R. Humphry-Baker, and M. Gratzel, J. Phys. Chem. B 107, 14336-14341 (2003) 11. Z. Yang, Chia-Ying Chen, P. Roy and Huan-Tsung Chang, Chemical Communications, 47, 9561-9571(2011) 12. 林美佳, 國立中興大學奈米所碩士論文(2011)
本研究以半導體AgSbS2量子點新材料取代染料吸光劑,一般的染料太陽能電池,都是將染料吸附在TiO2薄膜上,但是TiO2薄膜本身的光觸媒現象會使得染料分解,所以採用半導體量子點將是本研究的重點。本實驗採用連續離子沉積反應法(Successive Ionic Layer Adsorption and Reaction method-SILAR)合成Ag2S-Sb2S3量子點組裝到TiO2電極上,再進行退火350℃,進而長成AgSbS2量子點,作為敏化太陽能電池的光電極。本研究也探討了AgSbS2量子點的結晶結
構和型態以X-ray繞射(XRD)和穿透式電子顯微鏡(TEM)分析。其光學特性藉由紫外-可見光光譜儀(UV-Vis spectroscopy)分析,並對本實驗的電池做Power dependence分析其效率。使用二氧化鈦緊密層、塗佈二氧化鈦散射層(TiO2 scattering layer)、含KI多硫電解液,達到本實驗最佳化的太陽能電池。最佳電池轉換效率為0.34%,開路電壓0.32V,短路電流密度2.42 mA/cm2,填充因子為43.6%,並在10.6%的太陽光照射下,最高效率可達到0.42%。

We study AgSbS2, a low-cost and easy to be made and apply to the quantum dot-sensitized solar cells (QDSC). The AgSbS2 quantum dots (QDs) were synthesized on a nanoporous TiO2 electrode by the successive ionic layer adsorption and reaction method (SILAR). To improve efficiency, passivation treatments including a TiO2 under layer, a ZnS coating and
additional treatments including annealing, a TiO2 scattering layer and an Au counter-electrode we used. The best cell yields short-circuit current of2.42 mA/cm2, an open circuit voltage of 0.32V, a fill factor of 43.6% and a power conversion efficiency of 0.34%. The crystallinity and morphology were characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The optical properties of these AgSbS2 QDs were characterized by UV-vis spectroscopy.
其他識別: U0005-2008201219123300
Appears in Collections:物理學系所

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