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標題: 應變矽基合金反轉層之電洞遷移率計算
Hole Mobility Calculation of Strained Silicon-based Alloy Inversion Layer
作者: 陳冠廷
Chen, Kuan-Ting
關鍵字: 矽基合金;Silicon-based;遷移率;應變;Mobility;Strained
出版社: 物理學系所
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Advanced MOSFET device formed from novel Si-based materials, such as silicon-germanium (SiGe) alloys, are simple and low cost to manufacture. In this thesis we focus on hole mobility in the inversion layer of the MOSFETs using novel silicon-germanium alloy channel materials. The primary topic of this work is the theoretical calculation of hole mobility in the SiGe alloy PMOSFET inversion layer.
Hole mobility in the SiGe alloy inversion layer is calculated using a k.p band structure method and the Kubo-Greenwood mobility formula. The model parameters used in the calculations are calibrated by matching the measured low-field mobility of Si and Ge. We study alloy-limited, phonon-limited, and total mobilities in the inversion layers of relaxed and biaxial strained SiGe on (100), (110), and (111) substrates, respectively.
其他識別: U0005-1607201313244800
Appears in Collections:物理學系所

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