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Design and Fabrication of RF MEMS Switches Combined with Inductors
|關鍵字:||MEMS;微機電;RF switches;actuator;post-process;series inductors;equivalent circuit;射頻開關;致動器;後製程;串聯電感;等效電路||出版社:||機械工程學系所||引用:|| J. J. Yao, “RF MEMS from a device perspective,” Journal of Micromechanics and Microengineering, vol. 10, No. 4, 2000, pp. R9-R38.  C. T. C. Nguyen, L. P. B. Katehi and G. M. Rebeiz, “Micromachined devices for wireless communication,” Proceedings of the IEEE, vol. 86, No. 8, 1998, pp. 1756-1768.  J. J. Yao and M. F. Chang, “A surface micromachined miniature switch for telecommunication applications with signal frequencies from dc up to 4 GHz,” International Conference on Solid-State Sensors and Actuators, Proceedings, vol. 2, 1995, pp. 384-387.  C. Goldsmith, J. Randall, S. Eshelman, T. H. Lin, D. Denniston, S. Chen and B. Norvell, “Characteristics of micromachined switches at microwave frequencies,” IEEE Microwave Theory Tech. Symp., vol. 4, No. 2, 1996, pp. 1141–1144.  D. Hyman, J. Lam and B. 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本論文主要為電容式微機電射頻開關的結構設計與高頻特性分析，製作是利用台積電標準0.35μm 2P4M(double polysilicon four metal) CMOS(complementary metal oxide semiconductor)製程來製作微機電射頻開關，是以靜電力的方式驅動微開關，微開關的結構主要包含共平面波導線(CPW)、懸浮薄膜及串聯電感。其中，懸浮薄膜是利用後製程蝕刻氧化矽所製作而成。本研究設計三種微開關，分別為低驅動電壓的微開關(Type-a)、串聯電感的微開關(Type-b)與較高驅動電壓結合串聯電感的微開關(Type-c)，並探討此三種微開關的高頻特性。實驗數據顯示，當微開關結合串聯電感後，共振頻率較易獲得，並且利用此方式可更容易得到微開關之最佳隔離度。微開關在未施加電壓，串聯電感後，其頻率在22 GHz時，插入損失為-1.50 dB，反射損失為-10.4 dB。當施予驅動電壓13V時，可輕易的找到共振頻率點，其共振頻率點為22 GHz時，具有最大隔離度為-19.0 dB。
This paper studies the structural design and performance analysis of RF micromechanical system (MEMS) capacitance switches. The fabrication of the switches uses the standard 0.35μm 2P4M (double polysilicon four metal) CMOS (complementary metal oxide semiconductor) process and post-process. The switches are actuated by an electrostatic force. The structure of switches consists of a CPW transmission lines, suspended membrane and series inductors. The suspended membrane of the switches is released by using the post-process of etching silicon dioxide. This study designs three kinds of switches, which are low driving voltage switch, low driving voltage switch with series inductors, and higher driving voltage switch with series inductors. The performances of three switches are discussed in this paper. Experimental results show that the insertion loss and return loss of the switch are -1.50 dB and -10.4 dB at 22 GHz, respectively. When the switch is supplied a driving voltage of 13V, the isolation of the switch is -19.0 dB at 22 GHz.
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