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標題: 整合積體電路的FET微壓力感測器
作者: 戴銚葦
Tai, Yao-Wei
關鍵字: CMOS;金氧半場效電晶體;MOSFET;pressure sensor;readout circuits;壓力感測器;聚對二甲苯;感測電路
出版社: 機械工程學系所
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Dai, “Micro pressure sensors of 50μm size fabricated by a standard CMOS foundry and a novel post process”, IEEE International Conference Micro Electro Mechanical Systems, pp. 578-581, 2005. [20] K. M. Sung and L. Yusuf, CMOS digital integrated circuits analysis and design, McGraw-Hill, 2004. [21] S. Timoshlnko and S. K. Woinowsky, Theory of plates and shells, pp. 114-204, McGraw-Hill, 1959. [22] H. Reismann, Elastic Plates:theory and application, pp.115-120, Wiley, 1988. [23] C. R. Liu, and J. L. Chen, CMOS device physics and process integration : theory practice & practice, Wunan, 2006. [24] T. Someya, “Integration of organic field-effect transistors and rubbery pressure sensors for artificial skin applications”, IEEE International Electron Devices Meeting, pp. 8, 2003. [25] T. Someya, H. Kawaguchi and T. Sakurai, “Cut-and-paste organic FET customized ICs for application to artificial skin”, IEEE International Solid-State Circuits Conference, Vol. 1, pp. 288-529, 2004. [26] Z. Zhang, R. Yue and L. Liu, “The application of double-gate MOSFET mixer in digital pressure sensor”, International Conference Solid-State and Integrated Circuits Technology, Vol. 3, pp. 1796-1799, 2004. [27] H. Kawaguchi, T. Someya, T. Sekitani and T. Sakurai, “Cut-and-paste customization of organic FET integrated circuit and its application to electronic artificial skin”, IEEE Journal of Solid-State Circuits, Vol. 40, pp. 177-180, 2005. [28] 莊達人,VLSI 製造技術,高立圖書有限公司,2000年。 [29] 行政院國家科學委員會,微機電系統技術與應用,精密儀器發展中心出版,2003年。 [30] 楊志偉,含感測電路的整合型微壓力感測器,國立中興大學機械研究所碩士論文,2006年。
This study presents a FET (field effect transistor) micro pressure sensor manufactured by the commercial CMOS (complementary metal oxide semiconductor) process and a post-process. The benefits of the pressure sensor are easy post-process, small area, low cost, and good performance. The gate of the transistor, which is a dynamic structure, is adopted as the membrane of the pressure, and the gate-source voltage is a linear output related to the pressure when keeping constant current in the channel. The pressure sensor needs a post-process to release the membrane and seal etch-holes. The post-process utilizes wet etching to remove sacrificial layers, which are stacked layers formed from metal and via layers, to suspend the membrane of pressure sensor. Then, LPCVD parylene is used to seal the etch-holes of pressure sensor.
Besides, this circuits realize a simple method to convert the current variation of the pressure sensors into the voltage output. Differential-pairs-input opera-tional amperifier has a differential- pair-mode -gain(Ad) of 40dB and a phase-margin of 60. The sensitivity of the pressure sensors are 0.032mV/kPa in pressure range of 0-500kPa.

讀出訊號部份係以一簡單之感測電路,應用一差動放大增益約(Differential Pair Gain) >40db以及相位邊際增益(PM)>60°,外加直流偏壓於閘極薄膜上Vgs=3V時,其壓力測量範圍為0-500kPa,靈敏度約0.032mV/kPa。
其他識別: U0005-0708200710042100
Appears in Collections:機械工程學系所

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