Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/2205
標題: 結合微機電可變電容的微波帶通濾波器
Microwave Bandpass Filter with MEMS Tunable Capacitors
作者: 劉邦旭
Liu, Bang-Shiu
關鍵字: bandpass filter;帶通濾波器;variable capacitor;turning ratio;insertion loss;可變電容;調變比;插入損失
出版社: 機械工程學系所
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Okamoto, “A 0.5 - 2.0 GHz Tunable Bandpass Filter Using YIG Film Grown by LPE,” IEEE Transactions on Magnetics, vol. 23, no. 5, pp. 3745-3747 (1987). [14] B. Pillans, A. Malczewski, R. Allison, and J. Brank, “6-15 GHz RF MEMS Tunable Filters,” IEEE MTT-S International Microwave Symposium Digest, vol. 2005, pp. 919-922 (2005). [15] J. L. Lopez, J. Verd, A. Uranga, J. Giner, G. Murillo, F. Torres, G. Abadal, and N. Barniol, “A CMOS–MEMS RF-Tunable Bandpass Filter Based on Two High-Q 22-MHz Polysilicon Clamped-Clamped Beam Resonators,” IEEE Electron Device Letters, vol. 30, no. 7, pp. 718-720 (2009). [16] A. Takacs, D. Neculoiul, D. Vasilache, A. Muller, P. Pons, H. Aubert, and R. Plana, “An Innovative and Versatile Topology for Tunable Bandpass Filter,” Proceedings of the International Semiconductor Conference, CAS, vol. 1, pp. 297-300 (2007). [17] R. Z. Mina, M. L. Hossein, K. Aditya, and A. Farrokh, “An Integrated 800-MHz Coupled-Resonator Tunable Bandpass Filter in Silver With a Constant Bandwidth,” Journal of Microelectromechanical Systems, vol. 18, no. 4, pp. 942-949 (2009). [18] A. Goni, J. del Pino, B. Gonzalez, and A. Hernandez, “An Analytical Model of Electric Substrate Losses for Planar Spiral Inductors on Silicon,” IEEE Transations on Electron Devices, vol. 54, no. 3, pp. 546-553 (2007). [19] C. P. Yue, and S. S. Wong, “Design Strategy of On-Chip Inductors for Highly Integrated RF Systems,” Proceedings - Design Automation Conference, pp. 982-987 (1999). [20] C. P. Yue, and S. S. Wong, “On-Chip Spiral Inductors with Patterned Ground Shields for Si-Based RF IC’s,” IEEE Journal of Solid-State Circuits, vol. 33, no. 5, pp. 743-752 (1998). [21] D. S. Greywall, and P. A. Busch, “Coupled micromechanical drumhead resonators with practical application as electromechanical bandpass filters,” Journal of Micromechanics and Microengineering, vol. 12, pp. 925-938 (2002). 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摘要: 
本文利用TSMC標準0.35 μm 2P4M CMOS製程製作可調變的微帶通濾波器,以二階電容耦合型帶通原型電路轉換成可結合可變電容的等效電路。當可變電容依序增加電壓時,微帶通濾波器的中心頻率越往低頻移動,並且具有良好的再現性。模擬結果顯示可調變帶通濾波器驅動電壓5 V時調變量為35%,而濾波器的中心頻率可由10.85 GHz調變至7.53 GHz。在可變電容方面,是利用兩組不同形式的可變電容作電容調變,在最大驅動電壓5 V時,兩組可變電容分別可由0.47 pF變化至2.49 pF與0.22 pF變化至0.65 pF。在後製程方面,應用濕蝕刻技術掏空二氧化矽,釋放可變電容的懸浮結構,以完成製作結合可變電容的微帶通濾波器。
量測結果顯示可調變的微帶通濾波器在可變電容操作3 V的驅動電壓下,濾波器的中心頻率由10.43 GHz變化至8.53 GHz,而插入損失亦從-27.703 dB變化-30.941 dB,調變頻率比為22.3%。

This study investigates the fabrication of microwave tunable bandpass filters using the strandard TSMC 0.35 μm 2P4M (double polysilicon four metal) CMOS (complementary metal oxide metal semiconductor) process. The capacitive-coupled second-order prototype circuit is converted into the equivalent circuit which can combined with variable capacitor. When the driving voltage applies to the variable capacitors sequentially, the center frequency of the tunable bandpass filters moves to low-frequency, and the tunable bandpass filters have good reproducibility. The simulated results show that the tunable bandpass filters can achieve a tuning range of 35% with a bias of 5 V, and the center frequency of the micro bandpass filters is turned from 10.85 GHz to 7.53 GHz. The two different variable capacitors are turned from 0.47 pF to 2.49 pF and from 0.22 pF to 0.65 pF, respectively. The tunable bandpass filters require a post-process to etch the silicon dioxide, and to release the suspended structures in the variable capacitors.
The experimental results show that the tunable bandpass filters have a tuning range of 22% with a bias of 3V, the center frequency is turned from 10.43 GHz to 8.53 GHz, and the insertion loss changed from -27.703 dB to -30.941 dB.
URI: http://hdl.handle.net/11455/2205
其他識別: U0005-0502201013154600
Appears in Collections:機械工程學系所

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