Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/2214
DC FieldValueLanguage
dc.contributor.advisor戴慶良zh_TW
dc.contributor.advisorChing-Liang Daien_US
dc.contributor.author彭宣榕zh_TW
dc.contributor.authorPeng, Hsuan-Jungen_US
dc.date2005zh_TW
dc.date.accessioned2014-06-05T11:42:42Z-
dc.date.available2014-06-05T11:42:42Z-
dc.identifier.urihttp://hdl.handle.net/11455/2214-
dc.description.abstract本研究利用標準0.35μm 2P4M (double polysilicon four metal) CMOS (complementary metal oxide semiconductor)製程來製作微機電射頻開關,開關是以電容耦合(capacitive coupling)的方式進行運作,是一種以靜電力為驅動的開關,開關的結構包含了共平面波導(coplanar waveguide)的傳輸線和一個架構於其上的薄膜,共平面波導與薄膜是利用CMOS製程裡的金屬層製作。以此方式製作微機電射頻開關的好處,是在完成標準CMOS製程後,只需要一道簡單的後製程即可完成開關的製作,而我們所採用的後製程亦相容於標準的CMOS製程。後製程是以Silox Vapox III溶液蝕刻氧化矽層,然後將薄膜懸浮。實驗結果顯示此一開關所需的吸附電壓(pull-in voltage)為18伏特,微結構的最大變形量小於447.06nm,在頻率50GHz時插入損失為-4.255dB;當開關被施以驅動電壓後,隔絕度為-14.8dB。微機電射頻開關在扣除pad的寄生效應後,在頻率50GHz時插入損失為-2.5dB,反射損失為-11.2dB。zh_TW
dc.description.abstractThis work investigates the fabrication of a RF (ratio frequency) MEMS (micro elector mechanical system) switch using the standard 0.35μm 2P4M (double polysilicon four metal) CMOS (complementary metal oxide semiconductor) process and the post-process. The switch is a capacitive type, which is actuated by an electrostatic force. The structure of the switch consists of a CPW (coplanar waveguide) transmission lines and a suspended membrane. The CPW lines and the membrane are the metal layers of the CMOS process. The main advantage of MEMS switch is only needed a simple post-process, which is compatible with the CMOS process. The post-process uses an etchant, Silox Vapox III, to etch oxide layer to release the suspended membrane. Experiment results show that the pull-in voltage of the switch is about 18V. The insertion loss and isolation at 50GHz are -2.5 dB and -15dB, respectively.en_US
dc.description.tableofcontents中文摘要 I Abstract II 致謝 III 目錄 IV 圖目錄 VI 表目錄 IX 第一章 前言 1 1-1射頻微機電開關 2 1-2文獻回顧 3 1-3研究動機 5 第二章 設計與模擬 6 2-1基本架構 6 2-2作用原理 8 2-3力學模型 10 2-4模擬 11 第三章 製作 14 3-1 CMOS製程 14 3-2 後製程 14 3-3 測試元件 18 3-4 製作結果 26 第四章 結果與討論 28 4-1量測架構 28 4-2量測結果 30 第五章 改良式微機電射頻開關 34 5-1 設計與模擬 34 5-2 製作 43 5-3 結果與討論 51 第六章 結論與未來展望 62 參考文獻 68zh_TW
dc.language.isoen_USzh_TW
dc.publisher機械工程學系zh_TW
dc.subjectMEMSen_US
dc.subject微機電zh_TW
dc.subjectRF switchen_US
dc.subjectCPWen_US
dc.subjectactuatoren_US
dc.subjectCMOSen_US
dc.subjectpost-processen_US
dc.subject射頻開關zh_TW
dc.subject共平面波導zh_TW
dc.subject致動器zh_TW
dc.subject互補式金氧半導體zh_TW
dc.subject後製程zh_TW
dc.title以蝕刻CMOS氧化層的後製程處理方法製作微機電射頻開關zh_TW
dc.titleFabrication of RF MEMS Switch by the post-CMOS process of etching silicon dioxideen_US
dc.typeThesis and Dissertationzh_TW
item.openairetypeThesis and Dissertation-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.grantfulltextnone-
item.fulltextno fulltext-
item.cerifentitytypePublications-
item.languageiso639-1en_US-
Appears in Collections:機械工程學系所
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