Please use this identifier to cite or link to this item:
Micro pressure sensor with wireless transmission circuits
|關鍵字:||CMOS;CMOS;Wireless transmission;Pressure sensors;無線傳輸;壓力感測器||出版社:||機械工程學系所||引用:||參考文獻  E. Hynes, P. Elebert, D. McAuliffe, D. Doyle, M. O’Neill, W. A. Lane, H. Berney and M. Hill, “The CAP-FET, a Scaleable MEMS Sensor Technology on CMOS with Programmable Floating Gate,” International Electron Devices Meeting Technical Digest, pp. 41, 2001.  H. K. Trieu, N. Kordas and W. Mokwa, “Fully CMOS Compatible Capacitive Differential Pressure Sensors with On-chip Programmabilities and Temperature Compensation,” Proceedings of IEEE, vol. 2, pp. 1451-1455, 2002.  L. S. Pakula, H. Yang, H. T. M. Pham, P. J. French and P. M. Sarro, “Fabrication of A CMOS Compatible Pressure Sensor for Harsh Environments,” Journal of Micromechanics and Microengineering, vol. 14, pp. 1478-1483, 2004.  L. J. Yang, C. C. Lai, C. L. Dai and P. Z. Chang, “A Piezoresistive Micro Prssure Sensor Fabricated by Commercial DPDM CMOS Process,” Tamkang Journal of Science and Engineering, vol. 8, pp. 67-73, 2005.  C. L. Dai and M. C. Liu, “Complementary Metal-Oxide-Semiconductor Microelectromechanical Pressure Sensor Integrated with Circuits on Chip,” Japanese Journal of Applied Physics, vol. 46, pp. 843-848, 2007.  J.M.Lysko, R.S.Jachowicz, M.A.Krzycki, “Semiconductor pressure sensor based on FET structure, “Proc. Of IEEE Instrumentation and Measurement Technology Conference,” pp.1233-1236, 1994.  L. Svensson, J.A. Plaza, M.A. Benitez, J.Esteve, E,Lora-Tamayo， “Surface micromachining technology applied to the fabrication of a FET pressure sensor,” J.Micromech.Microeng, vol.6, pp.680-836, 1996.  E.Hynes, M.O’Neill, D.McAuliffe, H.Berney, W.A.Lane, G.Kelly, M.Hill, “Development and characterisation of a surface micromachined FET pressure sensor on a CMOS process,” Sensors and Actuators,vol.A, pp. 283-292, 1999.  E.Hynes, P.Elebert, M.O’Neill, H.Berney, W.A.Lane, G.Kelly, M.Hill, “Development of an FET Pressure Sensor Model and use to Predict Sensor Behaviour as aFunction of Electrode Geometry,” MSM 2000, San Diego, USA, pp.185-188  S. Buschnakowski, A. Bertz, W. Brauer, S. Heinz, R. Schuberth, G. Ebest and T. Gessner, “Development and Characterisation of A High Aspect Ratio Vertical FET Sensor for Motion Detection,” International Transducers, Solid-State Sensors, Actuators and Microsystems Conference, vol. 2, pp. 1391-1394, 2003.  Hitachi, Ltd., “An Ultra Small RFID Chip: μ-chip”, IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, pp. 241-244, 2004.  Namjum Cho, Seong-Jun Song, Sunyoung Kim, Shiho Kim, and Hoi-Jun Yoo, “A 5.1-μW UHF RFID Tag Chip integrated with Sensors for Wireless Environmental Monitoring ,” Proceedings of ESSCIRC, European Solid-State Circuits Conference, pp. 279-282, 2005.  L. H. Guo, A. P. Popov, H. Y. Li, Y. H. Wang, V. Bliznetsov, G. Q. Lo, N. Balasubramanian, and D.L. Kwong, “A small OCA on a 1 × 0.5-mm 2.45GHz RFID Tag—Design and Integration Based on a CMOS-Compatible Manufacturing Technology,” IEEE Electron Device Letters, vol. 27, no. 2, pp. 96-98 , 2006.  Y. C. Lee and C. S. Park, “A very compact 62GHz transmitter LTCC SiP module for wireless terminals applications,” Microwave and optical technology letters, vol. 49, pp. 575-577, 2007.  P. C. Wang, C. J. Chang, W. M. Chiu, P. J. Chiu, C. C. Wang, C. H. Lu, K. T. Chen, M. C. Huang, Y. M. Chang, S. M. Lin, K. U. Chan, Y. H. Lin and C. C. Lee, “A 2.4 GHz Fully Integrated Transmitter Front End with +26.5-dBm On-Chip CMOS Power Amplifier,” IEEE Radio Frequency Integrated Circuits Symposium, pp. 263-266, 2007.  Sheng-Hsiang Tseng, Ying-Jui Hung, Ying-Zong Juang, Michael S.-C. Lu, “A 5.8-GHz VCO with CMOS-compatible MEMS inductors,” Sensors and Actuators A pp.187–193, 2007.  Kenneth K. O, Kihong Kim, Brian A. Floyd, Jesal L. Mehta, Hyun Yoon, Chih-Ming Hung, Dan Bravo, Timothy O. Dickson, Xiaoling Guo, Ran Li, Narasimhan Trichy, Jim Caserta, Wayne R. Bomstad, II, Jason Branch, Dong-Jun Yang, Jose Bohorquez, Eunyoung Seok, Li Gao, Aravind Sugavanam, J.-J. Lin, Jie Chen, and J. E. Brewer, “On-Chip Antennas in Silicon ICs and Their Application,” IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 52, NO. 7, pp.1312-1323, JULY 2005.  Wei Gao and Zhiping Yu, “Scalable Compact Circuit Model and Synthesis for RF CMOS Spiral Inductors,” IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 54, NO. 3, pp.1055-1064, MARCH 2006.  Hirotaka SUGAWARA, Kenichi OKADA and Kazuya MASU, “Small-Area Inductor for Silicon CMOS Chips,” Japanese Journal of Applied Physics Vol. 44, No. 4B, pp. 2766–2769, 2005.  Stefan von der Mark, Meik Huber and Georg Boeck, “24 GHz Direct Conversion Transceiver for Sensor Networks,” IEEE Communications Society subject matter experts for publication in the WCNC 2007 proceedings, pp.479-482, 2007.  Nattapon Chaimanonart and Darrin J. Young, “Remote RF Powering System for Wireless MEMS Strain Sensors,” IEEE SENSORS JOURNAL, VOL. 6, NO. 2, APRIL 2006, pp.484-489, 2006.  Andrew D. DeHennis, and Kensall D. Wise, “A Fully Integrated Multisite Pressure Sensor for Wireless Arterial Flow Characterization,” JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 15, NO. 3, pp.678-685, JUNE 2006.  Norbert R.Malik, Electronic Circuits Analysis, Simulation, and Design, 東華書局  Donald A. Neamen, Semiconductor Physics & Devuces, 台商圖書  Sung-Mo Kang, Yusuf Leblebici, CMOS數位積體電路分析與設計, 全華科技圖書  戴銚葦，整合積體電路的FET微壓力感測器，國立中興大學機械研究所碩士論文，2007  林祐鋒，可結合於微感測器之射頻傳輸器，國立中興大學機械研究所碩士論文，2008||摘要:||
本論文利用標準TSMC 0.35 μm 2P4M CMOS製程，製作結合無線射頻系統之壓力感測器，分別設計了電容和FET型式的微壓力感測器，並搭配上不同的電路，使用環狀振盪器作為射頻產生器，並搭配電感天線將訊號以無線傳輸方式輸出。壓力計方面均利用半徑為50 μm的圓型壓力薄膜結構，藉由受壓後薄膜的位移改變以感測壓力。其中電容式微壓力計的電路，藉由直流偏壓供給環狀振盪器產生射頻訊號，由電容式微壓力感測器替代電路中的電容，當電容變化會使得輸出頻率變化；此外FET式微壓力感測器則與放大電路結合，當施壓時會使得感測器輸出功率提升，藉由改變輸出訊號的功率以感測壓力。製程完成後利用蝕刻液，以濕式蝕刻方式，將壓力薄膜結構釋放懸浮，並且使用化學沈積系統沈積高分子材料parylene，將壓力空腔封裝，以量測外界與壓力腔的壓差。
Wireless micro pressure sensors were manufactured using the standard 0.35 μm CMOS (complementary metal oxide semiconductor) process and a post-CMOS process. In this study, two different pressure sensors were designed, capacitive and FET (field effect transistor) type, and integration with different circuits. Wireless circuits included a ring oscillator and an antenna. The ring oscillator was used to generate RF (radio frequency) signal and the antenna was utilized to transmit the signal output. The capacitive pressure sensor changed in capacitance when applying a pressure to one, and the ring oscillator converted the capacitance variation of the sensor into the RF signal. The frequency of RF signal changed as the capacitance of the sensor varied. The EFT pressure sensor was combined with an amplifier that can amplify the output signal and increase the sensitivity of the sensor. The post-process employed the etchants to etch the sacrificial layers, and to release the suspended structures, and then used a PDS (parylene deposition system) to seal the etching holes in the pressure sensors.
The experimental results showed that the capacitive pressure sensor had a sensitivity of about 8 kHz/kPa and the FET pressure sensor had a sensitivity of about 0.08 mV/kPa. The sensitivity of output power in the FET pressure sensor was 0.0148
|Appears in Collections:||機械工程學系所|
Show full item record
TAIR Related Article
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.