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標題: 磁偶合對堆疊IC的影響與應用
Influence and application of magnetic coupling for stack IC
作者: 劉茂誠
Liu, Mao-Chen
關鍵字: stack IC;堆疊IC;3D-IC;magnetic coupling;CMOS MEMS;立體晶片;磁偶合;微機電
出版社: 機械工程學系所
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使用乾蝕刻移除矽基材,並利用濕蝕刻調整蝕刻深度,以控制基材與元件偶合效應,當蝕刻深度為70 μm,可使電感接近理想值,論文也提出,蝕刻深度與電感性能的關係,目的為可使電感與IC工作頻率搭配。晶片堆疊後,使用傳輸電感所產生的磁場,做堆疊晶片間的訊號傳遞與對CMOS元件、微感測器與微致動器的影響。其中接收訊號元件使用電感與電阻,由實驗結果可知,接收元件未工作於共振頻率時,電阻的接收效率優於電感,原因磁偶合型態時,電阻值決定輸出電壓量,此外並使用電感與電阻並聯以接收訊號,再以共源極放大電路,放大接收訊號。傳輸電感產生的磁場,對CMOS元件在低頻時,造成電感與電阻的電阻值隨頻率增加而下降;元件在高頻時,電感電感值不變,但電感電阻值隨頻率增加而增加。在微結構的電容方面,無論平板(變化面積)、指叉(變化介電係數)與金屬板(變化間距)形式,皆受磁場影響,甚至造成電容誤差9%。在氣體感測器方面,使用凝膠溶膠法製作氣體感測薄膜,並利用類電解方式,獲得於室溫中更靈敏的薄膜電阻變化量,使用此薄膜與IC整合,整合結果因感測薄膜與感測器電阻,皆受到磁場耦合影響,多晶矽電阻隨頻率上升而下降,感測薄膜則電阻無法預估,造成整合後的感測器,因磁場的關係,無法準確反應環境氣體的變化量。並使用氣體感測薄膜,以磁場與光功率激發,且將感測膜塗佈於,以CMOS晶片所製作的槽中,激發結果產生具方向性的發電效果。

The study investigates the influence of magnetic coupling in the stacked chips of IC (integrated circuits) and micro-devices. The micro-devices that include micro-inductors and micro-sensors are fabricated by using the commercial CMOS (complementary metal oxide semiconductor) process and the post-CMOS process. In order to obtain the suspended structures, the micro-devices use the post-CMOS process of dry and wet etching to etch the sacrificial layers and silicon substrate. The dry etching of RIE (reactive ion etching) is employed to remove the silicon substrate under the inductors in order to increase the resistance of the silicon substrate. The larger resistance can reduce the parasitic effect between the inductors and silicon substrate. The experiments show that the inductors are nearly ideal condition when the etching depth of the silicon substrate under the inductors is 70 μm.
When the function generator applies a sine-wave to the transmission inductor of the stacked chips, the magnetic field is generated that it is used to investigate the effect of magnetic coupling for the micro-sensors and to transport the signals between two chips. The inductors and resistors are employed to receive the ac signals. The receiver components work with non-resonant frequency and the induced voltage is determined by the resistance of devices. Using parallel inductance and resistance, the method is not only enlarging the output signal but also increasing the received range. The common source circuit is used to amplify the output signal. The magnetic field of transmission inductor results in the CMOS components to change the physical properties, and the resistance value of the components at low frequency decreases with increasing the frequency of transmission inductor. At high frequency, the inductance value maintains a constant with increasing the frequency of transmission inductor. However, the resistance value of the inductor rise with increasing the transmission inductor frequency.
In this work, the capacitive pressure sensors are manufactured and the sensors use the spacing change to detect the pressure. However, the magnetic field of the transmission inductor influences the capacitance of the capacitive sensors, and leading to the sensors can not work. According to our experiments, the capacitance of the capacitive pressure sensors produces a change of 9 percent owing to the magnetic field of the transmission inductor.
其他識別: U0005-1506200923403500
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