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標題: 矽奈米線pH感測器
Silicon Nanowire pH Sensors
作者: 陳沂宏
Chen, Yi-Hung
關鍵字: Silicon nanowires;矽奈米線;pH sensor;Micro channel.;pH感測器;微流道
出版社: 機械工程學系所
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本研究發展具有高靈敏、即時感測及可長時間重複使用的矽奈米線pH感測器。此pH感測器由兩個主要部份所組成,(1)透過半導體製程並覆蓋薄氧化層的矽奈米線;(2)透光性良好的聚二甲基矽氧烷(Polydimethylsiloxane, PDMS)微流道。並聯三根矽奈米線和五根矽奈米線兩種型式pH感測器被研製,量測不同pH濃度下,電阻值之改變;並聯三根矽奈米線pH感測器,量測pH值3至10,其電阻變化由850 kΩ變化至400 kΩ。每增加一個pH值之電阻百分比為10.4%;並聯五根矽奈米線pH感測器,當pH值由3變化至10時,電阻則由36.2kΩ變化至32.2 kΩ,每增加一個pH濃度值的電阻百分比為則為1.51%。

This study presents the fabrication of silicon nanowire pH sensors with highly- and instantly-sensitive and repeatedly-used properties. The silicon nanowire pH sensors are composed of two main parts: (1) the silicon nanowires covered by a thin oxide layer using semiconductor process, (2) the micro channel with good transmittance. Three silicon nanowires in parallel and five silicon nanowires in parallel pH sensors are fabricated. The resistance change of the pH sensors are measured under different pH values. The experimental results showed that the resistance of the three nonowires pH sensor changed from 850 to 400 kΩ as the pH varied from 3 to 10, and the percentage of the resistance change to each pH was about 10.4%. The resistance of the five nanowires pH sensor varied from 36.2 to 32.2 kΩ in the pH range of 3-10, and the percentage of the resistance variation to each pH was about 1.51%.
其他識別: U0005-0802201113275500
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