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標題: 奈米孔道電流特性之數值探討
Numerical study on the Ionic current characteristic in nanopores
作者: 鐘寶灨
Chung, Bao-gan
關鍵字: nanopore;奈米孔道;I-V curve;ionic current;I-V curve;sidewalls effect;電流-離子電流;電流-電壓曲線;邊壁影響
出版社: 機械工程學系所
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本研究使用數值方法求解Poisson、Nernst-Planck與Navier-Stokes來探討奈米孔道電流之特性。物理模型為一奈米圓管,其出入口處各連接一微米流道。在不同的電解液濃度與電壓下,探討sidewall 帶電情形在不同壁面電荷密度分佈與電滲流下之影響。

In this study, the ionic transport characteristics through a cylindrical nanochannel with charged entrance and exit and linearly varied surafce charge density along the nanochannel wall is numerically investigated. The ends of the nanochannel was connected with the microchanels which were regarded as the reservoirs. The Nernst-Planck equation that governed the ionic distribution was solved along with the Poission equation and Navier-Stokes equations.

Based on the nuemrical resulted of current-voltage curves obtained, it was found that the charge entrance can enhance the concentraion polarization in the anodic side of the nanochannel as compared with the uncharged entrance case. As comapred with conventional conducting membrane, no limiting current regime can be obserevd when the chraged entrance is included. Instead the current varies quradratically with the applied voltage.

Current rectification can be observed for nanochannel with and without charged entrance and exit when channel wall has linearly varied surface charge density. The numerical results indicated that the current rectification factor is higher for the nanochannel with charged entrance than that without charged entrance. The current rectification factor also found to increase with decrease of bulk concentration and increases of the surface charge density magnitude, slope, and charged entrance size.
其他識別: U0005-2208201018291600
Appears in Collections:機械工程學系所

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