Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/2557
標題: 矽晶片奈米孔洞陣列之製備與應用
Fabrication and applications of nanopore array on silicon
作者: 何京諭
Ho, Ching-Yu
關鍵字: Anodic etching;陽極蝕刻;Nanoporous array on silicon;Surfactant;矽基奈米孔洞陣列;界面活性劑
出版社: 機械工程學系所
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摘要: 
本研究利用黃光微影製程在N-type矽晶片上定義微米級之孔洞圖案,經由KOH預蝕刻後,再使用陽極蝕刻之方法使孔洞往下蝕刻,當孔洞蝕刻至晶片另一面時,孔洞尺寸將從奈米之尺度逐漸變大,最後會與晶片正面之圖案尺寸相同,藉由調整實驗參數,即能製作出高深寬比之矽奈米孔洞陣列之元件。
本研究得以製作出奈米孔洞陣列之原因如下:(1)設計蝕刻專用之夾具:實驗過程中會產生氣體,必須使氣體能順利排出,避免氣體影響後續反應之進行,又由於實驗過程中需於晶片背面照光,因此必須設計專用之夾具以符合實驗之需求。(2)改良蝕刻液之配方:以稀釋之氫氟酸溶液為基礎之蝕刻液其蝕刻效果未臻理想,不但蝕刻面之粗糙度大,孔洞生成狀態也不均勻。因此本研究藉由添加兩種界面活性劑(EtOH、DMSO)來改善此一現象,並使孔洞底部更為尖銳,因此當蝕刻穿孔時,底部之尖端即可形成奈米孔洞。

In this study, a novel method for the fabrication of high aspect ratio silicon nanoporous arrays is developed. At the beginning, the photolithographic process was implemented to pattern micro-porous arrays on an N-type silicon wafer. The pre-etching by KOH was than conducted to produce an inverted pyramid array on the wafer, followed by an anodic etching process to further etch the pores down from the tip of each pyramid. When the etchant penetrates the wafer, a patterned silicon nanoporous array can be obtained.
The success of the proposed method can be attributed to two main reasons. (1) The home-made fixture to efficiently expel the etching generated air and promptly hold the back-side illumination light; (2) The using of a new etchant which consists of the hydrofluoric acid and the EtOH and DMSO mixed surfactant to effectively polish the pore surface and sharp the tips of the etched pores. A nanoporous array can thus be fabricated when the etchant penetrates the wafer.
URI: http://hdl.handle.net/11455/2557
其他識別: U0005-2907201000004700
Appears in Collections:機械工程學系所

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