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Investigation on the semiconductor diode characteristics of anodic aluminum oxide
|關鍵字:||Anodic aluminum oxide;陽極氧化鋁膜;acid anion-contaminated region;AAO diode;depletion layer;AAO二極體;陰離子汙染區||出版社:||機械工程學系所||引用:|| A. Uhlir, “Electrolytic shaping of germanium and silicon. Bell System Tech,” J. 35, p 333-347 ,1956.  F. Keller, M. S. Hunter, and D. L. Robinson, “Structural features of oxide coatings on aluminium,” J. Electrochem Soc, 100, p411-419 , 1953.  R. B. Wehrspohn, J. N. Chazalviel, F. Ozanam, “Electrochemical preparation of porous semiconductors: from phenomenology to understanding,” Materials Science & Engineering B, p69-70, 2000.  S. Langa, I. M. Tiginyanu, J. Carstensen, M. Christopherser, and H. Föll, “Formation of porous layer with different morphologies during anodic etching of n-Inp,” J. Electroche,. Soc. Lett, 3, p514-516 , 2000.  C. T. Kresge, M. E. Leonowicz, W. J. Roth, J. C. Vartuli, J. S. Beck, “Ordered Mesoporous Molecular Sieves Synthesized by a Liquid-Crystal Template Mechanism,” Nature, 359, p710-712, 1992.  F. Li, L. Zhang, R. M. 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X. Wang, G. R. Han, “Fabrication and characterization of anodic aluminum oxide template,” Microelectronic Engineering 66, p166-170 , 2003.||摘要:||
本研究提出以陽極氧化鋁膜(Anodic Alumina Oxide, AAO)作為一新型的奈米二極體元件。此類二極體是利用AAO在陽極氧化的過程中，蝕刻液陰離子受到電場吸引而殘留於AAO晶格之結果，進而產生類PN空泛區之特性，因而擁有類似半導體二極體之特性。本研究主要以未去除背面氧化鋁基材之硫酸AAO，於正面氧化鋁上濺鍍一層約30nm的金膜作為正電極，負電極則為AAO背面未蝕刻之鋁基材，並利用銀膠將導線連接正負極，再與不同電解液進行陽極氧化之AAO及去除未蝕刻背面鋁金屬之AAO比較其二極體特性，主要是以Keithley 2400微電流量測儀測量其IV曲線。實驗結果驗證AAO確有二極體特性，由於不同蝕刻液之陰離子殘留程度不同，故其空泛區之效應亦不同，硫酸AAO之陰離子殘留度最高，其次為草酸AAO，磷酸AAO之陰離子殘留度最低，此可由硫酸AAO二極體之順向導通電壓為3.3V，草酸AAO二極體之順向導通電壓則是8.2V，磷酸AAO二極體更高達16.1V之實驗結果加以驗證。
During anodic oxidation of aluminum, the incorporated anion species from the electrolyte are drawn into the growing barrier layer at the pore base by the high electric field and, afterward, migrate inward. The barrier layer consists of acid anion-contaminated regions adjacent to the oxide/electrolyte interface and relatively pure alumina further away from it. It can be presumed that there is a depletion layer region in between the acid anion-contaminated material and the pure alumina material. This study investigates the diode characteristics of the anodic aluminum oxide (AAO) film based on the depletion layer region presumption. The AAO diode consists of a regular AAO film with the background aluminum serving as the negative electrode, and the thin gold film deposited on the top surface of the AAO film being the positive electrode. Different electrolyte acids are employed to fabricate AAO diodes which possess different electrical properties.
The diode characteristics in terms of the IV curves for AAO devices oxidized using different electrolyte acids were measured using Keithley 2400 SourceMeter. The characteristic IV curves indicate that the AAO devices possess the electrical property of a diode, especially the sulfuric acid processed AAO. It was observed that the threshold voltages for the sulfuric acid, oxalic acid and phosphoric acid are 3.3 V, 8.2 V and 16.1 V, respectively. This fits in with the sequential order presumption of the P-N depletion layer thicknesses for these three electrolyte acids. Since the sulfuric acid has the thinnest depletion layer, due to its having the smallest ratio of pure alumina regions to acid anion-contaminated material, it has the smallest threshold voltage.
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