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Fabrication micro-nanopores array on silicon using anodic oxidation method
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本研究於N型矽晶圓表面，以濃度4M氟化氫(HF)水溶液與定電壓0.6 V陽極氧化製程，成功製備微奈米孔洞陣列，其多孔矽孔徑為5 μm、孔深可達140.5 μm。以濃度4M HF水溶液與定電壓0.8 V陽極氧化製程，並加入蝕刻停止點追蹤，可成功製備微奈米多孔矽單孔，其奈米單孔孔徑為444 nm。接著將孔徑444 nm之單孔奈米結構應用於離子通透性量測，於0.1 V定電壓下，可量測到300 nA之穩定電流，矽晶微米孔洞陣列可應用於生醫用高分子微米針陣列製備。
This study focuses on the fabrication of high aspect ratio micro-nanochannel array and single micro-nanochannel on silicon using the anodic oxidation method. The anodic oxidation approach possesses advantages such as cost-effective process, controllable array pattern, and capable of large area production. The channel diameter and length can be well controlled by the process parameters such as the applied voltage, etchant concentration, light intensity, and processing time.
Using a 4 M hydrogen fluoride acid (HF) and a constant applied voltage of 0.6 V, a micro-nanochannel array with channel diameter of 5 μm and depth of 140.5 μm could be produced on a N-type silicon wafer. A φ= 440 nm single micro-nanochannel could also be fabricated using the process containing a 4 M HF, a constant applied voltage of 0.8 V, and an additional etching termination detection. The 440 nm single micro-nanochannel was further applied to the measurement of ion permeability. A constant 300 nA current through the single micro-nanochannel could be detected under an applied voltage of 0.1 V. The micro-nanochannel array can be further used as the mold for the casting of polymer micro-needle array for biomedical applications.
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