Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/2942
標題: 非晶矽奈米柱薄膜太陽電池之設計與分析
Design and Analysis on Amorphous Silicon Nanowire Thin Film Solar Cell
作者: 劉昌維
Liu, Chang-Wei
關鍵字: solar cell;太陽電池;amorphous silicon;numerical simulation;nanowire;非晶矽;數值模擬;奈米柱
出版社: 光電工程研究所
摘要: 
在薄膜太陽電池中,特別是非晶矽與奈米晶矽材料而言,吸收層厚度是
影響其轉換效率之一項重要參數。雖然較厚的吸收層可以吸收較多的太陽
光,光產生載子卻會透過較厚材料中各式各樣的隙間態復合,而形成較低的
短路電流和填充因數;相對而言,較薄的吸收層則無法吸收足夠的太陽光,
此將同樣地限制住短路電流。在這份研究工作中,我們利用奈米柱結構來解
決上述於光吸收多寡與載子傳輸之間的衝突。這個設計出的結構使用
ZnO:Al 奈米柱陣列或是n-type 非晶矽奈米柱陣列作為太陽電池元件的基
板,而p-i-n 非晶矽薄膜太陽電池依序沿著每根奈米柱的表面所成長。在太
陽光的照射之下,這些入射光將會沿著奈米柱的軸向被吸收。然而,光產生
載子則會沿著奈米柱的徑向進行傳輸。因此,這些長奈米柱可以吸收大部分
的太陽光,同時太陽電池的元件厚度亦可以仍然維持夠薄以致順利進行光產
生載子的傳輸。針對不同奈米柱柱長、柱徑、密度與太陽電池吸收層厚度,
對於短路電流、開路電壓、填充因數以及轉換效率的相關輸出特性在此份研
究中都進行了相關模擬與討論。

One of the parameters that limit the efficiency of a thin film solar cell, especially
the a-Si and the nc-Si solar cell is the cell thickness. Although thicker film can absorb
most of the sun light, the optical generated carriers will recombine through the
numerous gap states in the film that obtain lower short circuit current and fill factor. In
the controversy, thinner film can not absorb enough sun light that also limit the short
circuit current. In this work, we utilize nanowire structure to solve the conflict between
the light absorption and the carrier transport. The designed structure has ZnO:Al
nanowire array or n-type a-Si nanowire array on the substrate. The p-i-n a-Si solar cell
structure is grown along the surface of each nanowire sequentially. Under sunlight
illumination, the light is absorbed in the axis direction of the nanowire. However, the
carrier transport is along the radial direction of the solar cell. Therefore, the long
nanowire can absorb most of the solar light. In the meantime, the thickness of the solar
cell still is thin enough for photo-generated carrier transport. The dependence of short
circuit current, open circuit voltage and fill factor to the length, diameter and density of
ZnO:Al nanowires are simulated.
URI: http://hdl.handle.net/11455/2942
Appears in Collections:光電工程研究所

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