Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/2944
標題: 以原子層沉積技術在低溫使用二乙基鋅及氧化亞氮成長高品質氧化鋅薄膜之研究
High quality ZnO films prepared by ALD at low temperatures using DEZn and nitrous oxide
作者: Chung, Ping-Han
鍾秉翰
關鍵字: ZnO;氧化鋅;ALD;Buffer layer-annealing;Post-annealing;原子層沉積技術;緩衝層退火;成長後退火
出版社: 光電工程研究所
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摘要: 
In this thesis , low temperature (LT) zinc oxide (ZnO) films were prepared on c - plane sapphire substrates to explore the effect of buffer - layer annealing on the characteristic of the films . Atomic layer deposition (ALD) was employed to grow ZnO films using diethylzinc (DEZn) and nitrous oxide (N2O) . It was found that a LT - ZnO buffer layer having certein thickness annealed at an elevated temperature was beneficial to enable the realization of the high quality LT - ZnO films deposited subsequently . A self - limiting process window was observed in a range of DEZn admittance from 5.7 to 8.7 μmole/min . ZnO films grown at the self - limiting regime all show very good thickness uniformity . The monolayer - by - monolayer deposition nature along with buffer - layer annealing treatment allow to improve the structural , optical and electrical characteristics of the ALD - grown LT - ZnO films , post - annealing treatment under nitrogen (N2) ambient was also found to help achieving good properties of the ZnO films .

本實驗第一部分探討在(0001)面藍寶石基板上成長低溫氧化鋅薄膜 , 觀察在不同溫度緩衝層的情況下薄膜的各項特性 , 此研究使用原子層沉積技術來製作氧化鋅薄膜 , 二乙機鋅跟氧化亞氮作為沉積氧化鋅的前趨物。從實驗結果可以發現 , 緩衝層經過退火有助於後續成長高品質的氧化鋅 , 並且在二乙基鋅的流量範圍5.7到8.7μmole/min可以觀察到原子層沉積的自限式生長 , 在此範圍內的氧化鋅薄膜具有非常均勻的厚度。實驗的第二部分是在氮氣環境下將氧化鋅做成長後退火 , 經由實驗結果可以發現經由退火後氧化鋅的電性與光學特性都有明顯的改善。
URI: http://hdl.handle.net/11455/2944
其他識別: U0005-0307200816443500
Appears in Collections:光電工程研究所

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