Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/2945
標題: 低溫氧化鋅薄膜直接生長於(0001)面氧化鋁基板特性之研究
Characteristics of low-temperature ZnO films directly deposited on (0001) sapphire substrates
作者: Lai, Hung-Wei
賴鴻偉
關鍵字: 氧化鋅;ZnO;原子層沉積;氧化鋁基板;ALD;sapphire substrate
出版社: 光電工程研究所
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摘要: 
In this thesis, low temperature (LT) ZnO films were directly grown on (0001) sapphire substrates by atomic layer deposition (ALD) using diethylzinc (DEZn) and nitrous oxide (N2O) as source precursors. Purified N2 was utilized to serve as carrier gas. Self-limiting window of ALD was achieved for a certain range of DEZn flow rate. Self-limiting window was also observed for a substrate temperature ranging from 290 to 310oC. The structural, electrical and morphological characteristics of ZnO films were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmittance spectroscopy, atomic force microscopy and Hall measurements. The influences of film thickness on the transport characteristics of the ALD-grown ZnO film are also presented.

本論文研究以原子層沉積法在低溫直接成長氧化鋅薄膜在(0001)面氧化鋁基板上。實驗採用二乙基鋅及氧化亞氮分別做為鋅及氧原子之前驅物,並以高度純化之氮氣做為傳輸氣體。原子層沉積系統的自限式製程條件在二乙基鋅的部份流量區域可以達成。自限式試窗在基板溫度為290oC到310oC之間也可觀察到。氧化鋅薄膜之微結構特性、光吸收現象、電性及表面形態分別使用X-光繞射分析、掃描式電子顯微術、穿透光譜分析、原子力顯微術及霍爾量測來鑑定。對於藉由控制原子層沉積法反應循環次數以改變生長厚度於300oC之氧化鋅薄膜,及改變沉積溫度以探討氧化鋅薄膜特性之變化,也都有相關之實驗結果做討論。
URI: http://hdl.handle.net/11455/2945
其他識別: U0005-0707200817172400
Appears in Collections:光電工程研究所

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