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標題: 利用PS-b-PMMA共聚高分子薄膜製備應用於矽奈米柱太陽電池之奈米結構
Formation of nanostructure by self-assembled PS-b-PMMA block copolymer method for silicon nanowire solar cell applications
作者: Ho, Ming-Wei
關鍵字: 奈米柱;PS-b-PMMA;太陽電池;塊狀共聚物;奈米微影;copolymer;nanolithography;nanowire solar cell
出版社: 光電工程研究所
引用: 參考文獻 第一章 [1.1] Physics and Technology, 2nded, John Wiley & Sons, New York, Chap 9.5.2, 2002 [1.2] 莊嘉琛,太陽能工程—太陽電池篇全華科技,2003年3月 [1.3] Brendan M. Kayes, Harry A. Atwater, “Comparison of the device physics principles of planar and radial p-n junction nanorod solar cells” Journal Of Applied Physic 97, 114302 ,(2005) [1.4] Lu Hu, Gang Chen, “Ananlysis of Optical Absorption in Silicon Nanowire Arrays for Photovoltaic Applications” NANO LETTERS, Volume 7, Number 11, (November 2007) [1.5] Bozhi Tian, Xiaolin Zheng, Thomas J. Kempa, Ying Fang, Nanfnag Yu, Guihua Yu, Jinlin Huang, Charles M. Lieber, “Coaxial silicon nanowires as solar cells and nanoelectronic power sources” NATURE LETTERS, Vol 449, (October 2007) [1.6] L. Tsakalakos, J. Balch, J. Fronheiser, B. A. Korevaar, O. Sulima, J. Rand, “ Silicon nanowire solar cells” APPLIED PHYSICS LETTERS 91, 233117 (2007) 第二章 [2.1] 杜偉新,國立中興大學碩士論文 “ECRCVD成長矽奈米線之研究” 2004年8月 [2.2] Vladimir Sivakova, Frank Heyrothc, “Silicon nanowire growth by electron beam evaporation: Kinetic and energetic contributions to the growth morphology” Journal of Crystal Growth 300 (2007) 288–293 [2.3] Chih-Hsun Hsu, Hung-Chun Lo, Chia-Fu Chen, “Generally Applicable Self-Masked Dry Etching Technique for Nanotip Array Fabrication” NANO LETTERS Vol. 4, No.3, 471-475, (2004) [2.4] Huang-Shen Lin, Chih-Chiang Kao, Hao-Chung Kuo, Shing-Chung Wang, and Gong-Ru Lin, “ Self-Assembled Ni Nanodot on SiO2 Film—A Novel Reactive Ion Etching Mask for Si Nanopillar Formation on Si Substrate ” IEEE ELECTRON DEVICE LETTERS [2.5] Vladimir V. Poborchiia, Tetsuya Tadab,“Si pillar photonic crystal slab with linear defects: transmittance and waveguide properties” Optics Communications 210 (2002) 285–290 [2.6] [2.7] 陳宣毅,物理雙月刊(廿四卷二期)“塊狀共聚物薄膜:自聚合的新材料”2002年 4 月 [2.8] Koji ASAKAWA, Toshiro HIRAOKA, “Nanopatterning with Microdomains of Block Copolymers using Reactive-Ion Etching Selectivity” Jpn. J. Appl. Phys. Vol. 41 (2002) pp. 6112–6118 [2.9] K. W. Guarini,a) C. T. Black,“Nanoscale patterning using self-assembled polymers for semiconductor applications” J. Vac. Sci. Technol. B 19,6, Dec 2001 [2.10] P. Mansky, Y. Liu, E. Huang,“Controlling Polymer-Surface Interactions with Random Copolymer Brushes”1458 (1997); 275 Science [2.11] K. W. Guarini,a) C. T. Black,“Nanoscale patterning using self-assembled polymers for semiconductor applications” J. Vac. Sci. Technol. B 19,6, Dec 2001 [2.12] Vignesh Gowrishankar, Nathaniel Miller,“Fabrication of densely packed, well-ordered, high-aspect-ratio silicon nanopillars over large areas using block copolymer lithography” Thin Solid Films 513 (2006) 289–294 [2.13] Davood Shahrjerdi, Domingo I. Garcia-Gutierrez, “Fabrication of Ni Nanocrystal Flash Memories Using a Polymeric Self-Assembly Approach ”IEEE ELECTRON DEVICE LETTERS, VOL. 28, NO. 9, SEPTEMBER 2007 [2.14] K. W. Guarini,a) C. T. Black, “Nanoscale patterning using self-assembled polymers for semiconductor applications”J. Vac. Sci. Technol. B 19,6, Dec 2001
In this thesis, we discuss the method for optimizing the block copolymer thin film. Then, we achieve nanolithography by using the copolymer thin film on silicon wafer. Finally, we fabricate Cr and Al nanodot array on Si wafer.

Our experiment result show that: in proper film thickness, heating temperature and heating time, we can optimize the PS-b-PMMA nanoporous. After oxygen plasma treatment, a very thin film of metal mask was deposited on PS-b-PMMA nanoporous by thermal evaporation system. After pattern transfer, we have the Cr nanodot array as etch mask.

If we heat in acetic acid rinsing process, the PS-b-PMMA nanoporous form spherical structure with unknown material. After several repeat experiments, we found that the PS-b-PMMA thin film will split into chain and finally become spherical structure by increasing heating time.



其他識別: U0005-1508200816345400
Appears in Collections:光電工程研究所

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